BUW133 Search Results

Contextual Info: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

tsv 518

Abstract: BUW133 BUW133A BUW133H 133h
Contextual Info: t,b53^31 0 0 1 ^ 0 3 7 fl • DEVELOPM ENT DATA BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E 2SE D . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast

BUW133

Abstract: BUW133A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUW133/A DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS ·Designed for use in very fast switching applications in

con10a

Abstract: BUW133A BUW133 BUW133H 10 N j 400 V tsv 518
Contextual Info: 001^037 DEVELOPMENT DATA fl • BUW133 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. N AMER P H I L I P S / D I S C R E T E 25E . T -3 3 -J 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors In SOT93 envelope, intended for use In very fast

BUW133H

Abstract: NPN Transistor 450v 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW133H DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.

buw13a philips semiconductor

Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
Contextual Info: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A

"CHAPTER 1 Introduction to Power Semiconductors"

Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Contextual Info: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General

LT062

Abstract: mg15g1al3 EST051 GENTRON lt061 ET409 NPN MJ13091 2n6836 BUS48 et409
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Min (Hz) r ICBO Max (A) Max (s) (CE)««t Max (Ohms) Toper Max (°C) Package Style Devic s 20 Watts or More, (Cont'd) . . . .5 . . . -10 . .15 .

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

buw13a philips semiconductor

Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
Contextual Info: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle