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IPI100N08N3 Datasheets (2)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPI100N08N3 G		Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); V_DS (max): 80.0 V; R_{DS (on)} (max) (@10V): 9.7 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 70.0 A;	Original	PDF	548.81KB	11
IPI100N08N3GHKSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 70A TO262-3	Original	PDF	1.01MB

IPI100N08N3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
100n08n Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3 Contextual Info: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)	Original	ipp100n08n3 ipi100n08n3 ipb097n08n3 iec61249-2-21 +4pg-to220-3 pg-to262-3 pg-to263-3 100n08n	PDF
097N08N Abstract: 100n08n IPP100N08N3 G PG-TO220-3 JESD22 652 smd D46 diode Contextual Info: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)	Original	ipp100n08n3 ipi100n08n3 ipb097n08n3 pg-to220-3 +8pg-to262-3 pg-to263-3 100n08n 097n08n ipp100n08n3 g jesd22 652 smd d46 diode	PDF
aK 9AA diode Contextual Info: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H 0( J R ,?>=1H฀,& 1&/ Y	Original	ipp100n08n3 ipi100n08n3 ipb097n08n3 cg9d389 +5381b75 d5cd54 d1b75d 931d9 ak 9aa diode	PDF
75D diode Contextual Info: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 0( J 1&/ Y" /( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &	Original	ipp100n08n3 ipi100n08n3 ipb097n08n3 75d diode	PDF
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original	igbt welding machine scheme ikw40n120h3 aircon l1 smd diode schottky code marking sj +6transistor marking code 12w sot-23 24v application with ice3ar0680jz induction cooker fault finding ipw65r041 igw40n60h3 spw55n80c3	PDF
PX3544 Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly	Original	lead519 b152-h9345-g2-x-7600 px3544 px7510 +8px3560 ice2as01 equivalent px3540 primarion px3540 ice3br0665j primarion px3560 ice3br4765 ice3br1765j	PDF