B4574 Search Results

4H74

Abstract: NE68337 S21E
Contextual Info: N E C / C A L IF O R N IA 1SE NEC D • b457414 000145b NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES T -ÌH 5 1 NE68337 OUTLINE DIMENSIONS Units in mm • LOW OPERATING VOLTAGE OUTLINE 37 • LOW POWER CO NSUM PTION • HIG H INPUT IMPEDANCE DESCRIPTION AND APPLICATIONS

b4574

Abstract: B39221-B4574-Z910 QCC12B SAW Components Bandpass Filter
Contextual Info: SAW Components Bandpass Filter B4574 215,0 MHz Preliminary Data Ceramic package QCC12B Features ● Low-loss IF filter for mobile telephone ● Channel selection in GSM, PCN, PCS systems ● Ceramic SMD package Terminals ● Gold-plated Ni Dimensions in mm, approx. weight 0,2 g

1SS14

Abstract: 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND ND4000 nd4132 743e 1SS15
Contextual Info: N E C / 15E D CALIFORNIA NEC • T -c rj~ ò 1 b45743i4 0001137 b SILICON SCHOTTKY MIXER/DETECTOR DIODE ND4000 SERIES ABSOLl TE MAXIMUM RATINGS FEATURES SYMBOLS • LOW MEDIUM BARRIERS Pt • PASSIVATED CONSTRUCTION • HIGH RELIABILITY Top Tj T sdr DESCRIPTION AND APPLICATIONS

BB-B4574

Contextual Info: BRIGHT LED ELECTRONICS CORP. BB-B4574 SINCE 1981 ● Features: ●Package dimensions 1. Chip material: GaAsP/GaP 5.0 .197 2. Emitted color : Hi-Eff Red 3. Lens Appearance : Red Diffused 4. Pulse Rate 2.4 Hz (VDD=5V) 5. Operating Voltage：3V~12V (DC) 6. Easily be driven by TTL & C-MOS

varactor ghz

Abstract: GaAs varactor diode gaas varactor diodes ND3140-5M ND3140-5N ND3140-5S power varactor varactor diode high frequency GHz
Contextual Info: LT SE C N E C / CALIFORNIA 1SE b457414 D MM WAVE GaAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES T + 7 -/I GOOnOÔ T • LOW CONVERSION LOSS: Lo = 5 dB TYP at f = 10 GHz to 20 GHz ND3140-5S ND3140-5M ND3140-5N Units In mm OUTLINE 5S • HIG H CUTOFF FREQUENCY: fo = 240 GHz TYP

Microwave PIN diode

Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
Contextual Info: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BB-B4574 Features: Package dimensions 1. Chip material: GaAsP/GaP 5.0 .197 2. Emitted color : Hi-Eff Red 3. Lens Appearance : Red Diffused 4. Pulse Rate 2.4 Hz (VDD=5V) 5. Operating Voltage 3V~12V (DC) 8.6(.339) 1.0(.04)

NEC NE85635

Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 NE856 sot23 41 NE85635
Contextual Info: NEC NE C / CALIFORNIA 5 L .E J> b457414 000240^ NPN SILICON HIGH FREQUENCY TRANSISTOR 437 M N E C C NE856 S ER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH P R O D U C T : fr = 7 G H z The N E856 series of NPN epitaxial silicon transistors is

NE644

Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Contextual Info: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors

PD1712

Abstract: NEC SIP 8pin JPB568G UPB568HA P8HA-254B
Contextual Info: N E C / C A LIFO R N IA 30E D bMa7Mm 0002114 a h n e c c .- T W S - 1 9 - / 3 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER The ¿¿PB568C, the /¿PB568HA and the jjPB568G UPB568, UPB568HA are tw o-m odulus prescaleres fo r T V , C A T V and V T R , w h ich

NE202

Abstract: NE20300 NE20383A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN

siemens B4203

Abstract: B4570 Siemens ofw b4677 siemens saw filters QCC8B DCC-14 QCC12B QCC10B B4209
Contextual Info: Siemens Matsushita Components RF Filters for Cellular Phone Center Frequency MHz Type 1,5 dB Insertion Bandwidth Attenuation MHz dB Package Application 836,5 836,5 B4657 B4681 30,0 31,0 2,8 2,3 DCC6 DCC6 AMPS Tx AMPS Tx 836,5 836,5 B4690 B4111 31,0 30,0 3,0

G1966M SAW FILTER

Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
Contextual Info: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation

20PM4

Abstract: NE985100 NE985200 NE985400
Contextual Info: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)

NE250

Abstract: NE25000 dual-gate
Contextual Info: I SEC N E C / CALIFORNIA 15E I • bM574m HIGH PERFORMANCE DUAL-GATE G aAs MESFET FEATURES • V E R Y HIGH fM Ax: 60 GHz • TWO IN DEPEN DENT G A T E S FO R DESIGN F L E X IB IL IT Y Ta = 25°C) SYM BO LS PA R A M ETER S UNITS RATINGS Vos Drain to Source Voltage

2SC2570

Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

Contextual Info: BLINKING j LIT LAMPS • FEATU RES • Standard T1 3/4 • 1/4 Duty Cycle • Pulse Rate : L 2.0Hz , (2) 2.4Hz . (VDD=5V j - Operating Voltage : 2.0V — 15V (DC) • Easily be driven by TTI- & C-MOS circuit no external circuit needed • Plastic case color diffused

PC1675G

Abstract: 1675P
Contextual Info: 103 b4E7414 G002b4b 5 bE D E C/ CALIFORNIA NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE D IM ENSIO N S FEA TU RES Units in mm O UTLINE 39 (SOT-143) • W ID E BA N D W ID T H : 1900 MHz T Y P at 3 d B Point for UPC1675G

al 232 nec

Abstract: NE64400 NE644 NE64408 S21E
Contextual Info: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors

B4574-0023

Contextual Info: m o le x MKRO-C Rubber Cable Cordsets US Dual Key Male Plug With External Threads ORDERING INFORMATION AND DIMENSIONS 84574 •■ 1 . 6 8 - E3 £ f 2 Graft 18AW G O rder No. Length 84574 0000 84574-0001 84574-0002 84574-0003 84574-0004 3' 6'

NEL230153

Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Contextual Info: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB