ATF13736 Search Results

Contextual Info: ATF13736 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)90m P(D) Max. (W)225m Maximum Operating Temp (øC)175õ I(DSS) Min. (A)40m I(DSS) Max. (A)90m @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m

GHZ micro-X Package

Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
Contextual Info: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250

Avantek S

Abstract: Avantek, Inc AVANTEK transistor ATF13736TR1 Avantek atf-1323
Contextual Info: A V A N T E K INC 2QE T> 0AVANTEK lllllbt M ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • • • • • ODGbSS? 7 High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB

ATF-13736

Abstract: DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736
Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

ATF-13736

Abstract: ATF-13736-STR ATF-13736-TR1 gaas fet micro-X Package
Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

ATF-13736

Contextual Info: Whpl H E W L E T T müHM PA C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low N oise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high perfor­ m ance gallium arsenide Schottkybarrier-gate field effect transistor

ATF-13484

Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue
Contextual Info: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

Contextual Info: Who IHEWLETT mL'EM ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET PACKARD 36 micro-X Package1 Features • • • • • High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <i b at 12 GHz Low Noise Figure: 1.8 dB typical at 12 GHz

5082-2830

Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

GHZ micro-X Package

Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

GHZ micro-X Package

Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
Contextual Info: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature

ATF13736

Contextual Info: mLliM PACKARD What H E W L E T T * 2 -1 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low Noise Figure: 1.8 dB Typical at 12 GHz • High Associated Gain: 9.0 dB Typical at 12 GHz • High Output Power: 17.5 dB Typical at 12 GHz

ATF13136

Abstract: AN-A002 transistor atf TVRO stub tuner matching 5091-9055E ATF-13136
Contextual Info: ATF-13X36 Demonstration Amplifier Application Note G001 Although the following information covers the ATF-13136, the ATF-13336 and the ATF-13736 could be substituted, with some degradation in noise performance. Introduction This Application Note describes a one stage low noise amplifier

ATF-35176

Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Contextual Info: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the

ATF SOT

Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature

HSCH-5337

Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

ATF-13484

Abstract: AN-G001 MTT-24 low noise design ATF 10136 AN-G004 "common drain" amplifier impedance matching MIXER SCHEMATIC DIAGRAM 5091-3744E 13484 active mixer
Contextual Info: Active GaAs FET Mixers Using the ATF-10136, ATF-13736, and ATF-13484 Application Note G005 NOTE: The ATF-13484 has been obsoleted. However, the design techniques used with the ATF-13484 active mixer can be applied to the ATF-13736 as well. Introduction This application note documents

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5

AT-41486

Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101