ATF13736TR1 Search Results

Avantek S

Abstract: Avantek, Inc AVANTEK transistor ATF13736TR1 Avantek atf-1323
Contextual Info: A V A N T E K INC 2QE T> 0AVANTEK lllllbt M ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • • • • • ODGbSS? 7 High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB

ATF-13736

Abstract: DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736
Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

ATF-13736

Abstract: ATF-13736-STR ATF-13736-TR1 gaas fet micro-X Package
Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

ATF-13736

Contextual Info: Whpl H E W L E T T müHM PA C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low N oise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high perfor­ m ance gallium arsenide Schottkybarrier-gate field effect transistor

Contextual Info: Who IHEWLETT mL'EM ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET PACKARD 36 micro-X Package1 Features • • • • • High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <i b at 12 GHz Low Noise Figure: 1.8 dB typical at 12 GHz

ATF13736

Contextual Info: mLliM PACKARD What H E W L E T T * 2 -1 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features D escription • Low Noise Figure: 1.8 dB Typical at 12 GHz • High Associated Gain: 9.0 dB Typical at 12 GHz • High Output Power: 17.5 dB Typical at 12 GHz

Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8␣ dB Typical at 12␣ GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective