ATF35176 Search Results

Contextual Info: ATF35176 Transistors N-Channel UHF/Microwave JFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)70m P(D) Max. (W)225m Maximum Operating Temp (øC)175 I(DSS) Min. (A)20m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)1.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.40m

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

ATF35176

Abstract: ATF-35176 ATF-35076 ATF-3507 ATF35376TR1 ATF at 2.4 Ghz ATF35076 atf-3537 ATF-35376 ATF pHEMT
Contextual Info: HEWLETT-PACKARD/ C MP N T S LIE v '/ 'v HEW LETT K S S I PACKARD D • 4447504 Features • • • • • □ G O cm S 3T4 HHPA ATF-35076, -35176, -35376 2-18 GHz Low Noise Pseudomorphic HEMT 76 Package PHEMT Technology Low Noise Figure: 0.75 Typical at 12 GHz

ATF-35176

Abstract: ATF-35076 ATF-35176-STR atf-3537 atf 35 ATF35176 ATF-35176-TR1 ATF-35376-STR ATF35376
Contextual Info: ATF-35076, -35176, -35376 2-18 GHz Low Noise Pseudomorphic HEMT warn H EW LETT f t x f l PACKARD Features • • • • • 76 Package PHEMT Technology Low Noise Figure: 0.75 Typical at 12 GHz High Associated Gain: 11 dB Typical at 12 GHz Cost Effective Ceramic Microstrip Package

str 2656

Abstract: ATF-35176 atf35176 ATF-35076 atf35376 atf-35076-str 12GHZ low noise pseudomorphic ATF-35376-STR ATF-35176-STR
Contextual Info: ATF-35076, -35176, -35376 2-18 GHz Low Noise Pseudomorphic HEMT Ÿhnl H EW LET T IX J PACKARD F e a tu re s 76 Package • pHEMT Technology • Low Noise Figure: 0.75 Typical at 12 GHz • High Associated Gain: 11 dB Typical at 12 GHz • Cost Effective Ceramic Microstrip Package

ATF-35176

Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Contextual Info: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5