ATF13036 Search Results

Contextual Info: ATF13036 Transistors N-Channel UHF/Microwave JFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)90m P(D) Max. (W)225m Maximum Operating Temp (øC)175 I(DSS) Min. (A)40m I(DSS) Max. (A)90m @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m

ATF-13036

Abstract: ATF13036 ATF13036-STR gaas fet micro-X Package ATF-13036-TR2 ATF-13036-TR1
Contextual Info: blE J> HEWLETT-PACKARD/ CMPNTS E g i • ^ 4M475ÔH GH°fLow Note. Gallium Arsenide FET Pa c k a r d 36micro-X Package1 Features • • • • • □□□TfiTD MS? ■ H P A Low Noise Figure: 1.1 dB typical at 12 GHz high Associated Gain: 9.5 dB typical at 12 GHz

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

marking IAM transistor sot-23

Abstract: ATF-13170 transistor MARKING IAM IAM-XXX08 IAM-81008 HSMP 30XX HSMP 30XX ATF HSMS-282X HSMS-820X JESD22
Contextual Info: Quality Assurance Concepts and␣ Methodology Semiconductor Devices and Hybrid␣ Assemblies Reliability/Quality Philosophy Recognizing the increasing importance of microwave component reliability for the consumer, industrial, and military markets, the Components Group

ATF-13036

Contextual Info: H EW LETT-PA C K A R D / CMPNTS b lE J> • 4 4 4 7 5 A4 4S7 36m icro-X Package1 Features • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB at 12 GHz Cost Effective Ceramic Microstrip Package

ATF13036-STR

Contextual Info: ATF-13036 That H E W I T T mLUM PACKARD 2-16 GHz Low Noise Gallium Arsenide FET 36micro-X Package1 Features • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB at 12 GHz

ATF-35176

Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Contextual Info: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the

AVANTEK transistor

Abstract: ATF13036-STR
Contextual Info: AVANTEK 5DE INC AVANTEK D • U M lU h 0GGbS4E S ATF-13036 2-16 GHz Low Noise Gallium Arsenide FET Z\-2S Avantek 36 mlcro-X Package1 Features • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5