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    ATF10236 Search Results

    ATF10236 Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    ATF10236
    		Agilent Technologies 0.5?12 GHz Low Noise Gallium Arsenide FET Original PDF 44.75KB 3
    ATF-10236
    		Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF 44.75KB 3
    ATF10236
    		Avantek TRANSISTOR,JFET,N-CHANNEL,70MA I(DSS),MICRO-X Scan PDF 155.74KB 2
    ATF-10236-STR
    		Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF 38.73KB 4
    ATF-10236-STR
    		Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF 44.75KB 3
    ATF10236-STR
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 44.11KB 1
    ATF-10236-TR1
    		Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF 44.75KB 3
    ATF-10236-TR1
    		Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF 38.73KB 4
    ATF10236-TR1
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 44.11KB 1
    SF Impression Pixel

    ATF10236 Price and Stock

    Select Manufacturer

    HP - Hewlett-Packard ATF-10236-TR1

    Trans FET 5V 180mA GaAs 4-Pin Case 36 Micro-X T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics ATF-10236-TR1 690 1
    • 1 $3.42
    • 10 $2.22
    • 100 $1.61
    • 1000 $1.47
    • 10000 $1.47
    		Buy Now

    Hewlett Packard Co ATF-10236-TR1

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, X BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATF-10236-TR1 552
    • 1 $4.50
    • 10 $4.50
    • 100 $2.10
    • 1000 $1.95
    • 10000 $1.95
    		Buy Now

    Hewlett Packard Co ATF-10236

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, X BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATF-10236 45
    • 1 $12.00
    • 10 $6.00
    • 100 $5.20
    • 1000 $5.20
    • 10000 $5.20
    		Buy Now

    ATF10236 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    gaas fet micro-X Package

    Abstract: ATF-10236 36 Micro-X ATF-10236-STR ATF-10236-TR1 GA109 10236
    Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 36 micro-X Package Features Description • Low Noise Figure: 0.8 dB Typical at 4 GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    Original     		atf-102365965-8697egaas fet micro-x package36 micro-x+4atf-10236-stratf-10236-tr1ga10910236 PDF

    GHZ micro-X Package

    Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
    Contextual Info: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250


    Original     		atf-13100atf-13336atf-13736atf-13786+12atf-26836atf-26884atf-10236atf-10736atf-25170atf-25570ghz micro-x packagemicro-xatf-10136atf 26836atf-25735atf-10100 PDF

    JEW 5-58

    Contextual Info: A T F -10236 w arn H E W L E T T 1 "H M P A C K A R D 0.5-12 GHz Low Noise Gallium Arsenide FET Features • • • • 36 micro-X Package1 Low Noise Figure: 0.8 dB typical at 4 GHz Bias: Vos = 2V, I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz


    OCR Scan     		atf-102366962-8096ejew 5-58 PDF

    W1A sot23 transistor

    Abstract: ci LA 7804 ON w1a SOT-23 wl 1281 W02 SOT23 w1a, sot-23 ST 11791 EN 13557 yg 2025 W1A SOT23
    Contextual Info: HEW LETT 1 "KM P A C K A R D 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applica­ tions in the VHF through microwave frequency range.


    OCR Scan     		w1a sot23 transistorci la 7804 onw1a sot-23wl 1281+6w02 sot23w1a, sot-23st 11791en 13557yg 2025w1a sot23 PDF

    ATF-58143

    Abstract: GRH708 GRM40 LL2012-F ATF10236
    Contextual Info: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Agilent Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the


    Original     		atf-581435988-9119engrh708grm40+2ll2012-fatf10236 PDF

    gaas fet micro-X Package

    Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 36 micro-X Package Features Description • Low Noise Figure: 0.8 dB Typical at 4 GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    Original     		atf-102365965-8697egaas fet micro-x package PDF

    7804 regulator

    Abstract: AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885
    Contextual Info: 4 GHz Television Receive Only LNB Design Application Note A007 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		an1091atf-361635965-1235ean1136+155966-2488ean1139ina-51063an-a001an-s0055091-8825e7804 regulatoraft-10136s parameters for atf 10136an-a002low noise design atf 10136atf10236aft-102367804 voltage regulatormsf8885 PDF

    ATF-58143

    Abstract: GRH708 ATF58143 LL2012-F
    Contextual Info: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Avago Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the UHF through


    Original     		atf-58143atf-102365988-9119engrh708+2atf58143ll2012-f PDF

    SOT143 L03

    Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
    Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power


    Original     		5964-3854esot143 l03l0523d2030+7l03 sot143yg 2025microstripline fr4at-30511at-31011w02 sot23atf-10236 PDF

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		e-28230s-164ch-8902hrma-0470b+9semicon volume 1hpma-2085hp 33002aavantek atf26884sj 2036hpma-0470txvhpma-0485hpma-0370diode goc 61 PDF

    atf-41435

    Abstract: 99250 schematic diagram receiver data circuit satellite ATF-10235 5091-8823E
    Contextual Info: Design of a 4 GHz LNA for a TVRO System Application Note A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is


    Original     		5091-8823e5968-3244eatf-4143599250+2schematic diagram receiver data circuit satelliteatf-10235 PDF

    atf 36163 Low Noise Amplifier

    Abstract: ATF-10236 ATF36163 ATF-36163 LTC1044CS8 18 sot-363 rf power amplifier ATF10236
    Contextual Info: L and S Band Amplifiers using the ATF-36163 Low Noise PHEMT Application Note 1097 EESOF’s TouchstoneTM for The ATF-36163 PHEMT device has Windows and published S and Noise parameters. numerous applications as a low noise amplifier in the 900 MHz The reference plane for both the S


    Original     		atf-36163sc-70atf 36163 low noise amplifieratf-10236+4atf36163ltc1044cs818 sot-363 rf power amplifieratf10236 PDF

    yg 2025

    Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
    Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		5964-3854eyg 2025hp346a2305 isolator+6at-30511at-31011at-32033atf-10236an-g004equivalent transistor k 3532 PDF

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		1n57111n57121n57191n5767+16msa-1023msa-1100msa-1104msa-1105msa-1110vto-9068iam-810085082-2830hsmp-38955082-3043ina-02170ina-01170305335082-00125082-2970hsmp 2800 PDF

    ATF10236

    Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
    Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		atf-10236frequen0585963-3780e5966-0166e+10atf10236fet k 2611transistor bd 137-10agilent 9988microstriplineatf-10136transistor equivalent 2274 table chartatf-10736hp346amsa-0686 PDF

    avantek

    Abstract: Avantek amplifier ATF-10236 ATF-10236-STR ATF-10236-TR1 3320E Avantek, Inc
    Contextual Info: AVANTEK EOE D INC Q a v a n tek • imnhb GG0b537 1 ■ ATF-10236 0.5-12 GHz Low Noise FE Gallium Arsenide FET 'T - z i - z £ Avantek 36 mlcro-X Package1 Features • • • • • • Low Noise Figure: 0.8 dB typical at 4 GHz Low Bias: V d s = 2V, I d s = 20 mA


    OCR Scan     		qggbs37atf-10236avantekavantek amplifier+4atf-10236-stratf-10236-tr13320eavantek, inc PDF

    HP346A

    Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
    Contextual Info: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		hp346ad20305091-9311e47433+6w02 sot23at-30511at-31011at-32033atf-10236hewlett-packard transistor microwave PDF

    ATF-13484

    Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue
    Contextual Info: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		atf-10236atf-10136atf-13736atf-13484+12atf-21186atf-36163atf-36077atf 36163 low noise amplifierlow noise design atf 10136a008 amplifier transistoramplifier transistor 12 ghzatf phemtatf13484a007transistor atfmicrowave gaas fet catalogue PDF

    ATF-54143

    Abstract: ATF-641 ATF-10236 ATF-55143 ATF-54143 sot-343 variable power divider at 15 ghz ATF10236 atf54143 pHEMT 9015 transistor sot 23 SC 9015
    Contextual Info: A Low Noise High Intercept Point Amplifier for 900 MHz Applications using the Agilent ATF-54143 PHEMT Application Note 1299 1. Introduction The Agilent Technologies ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the


    Original     		atf-54143source715988-6670enatf-10236+8atf-641atf-55143atf-54143 sot-343variable power divider at 15 ghzatf10236atf54143 phemt9015 transistor sot 23sc 9015 PDF

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		1n57111n57121n57191n5767+16msa-1023msa-1100msa-1104msa-1105msa-1110vto-90685082-2830iam-81008hsmp-3895hsms-28505082-00128205 datasheethsms-285bhsms-285chsms-2862msa-0870 PDF

    GHZ micro-X Package

    Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
    Contextual Info: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		atf-36077atf-36163ot-363sc-70+14atf-44101atf-45101atf-45171atf-46101atf-46171ghz micro-x packagefield effect transistorsatf-26884atf 26836atf-10100atf-10136atf-13100atf-13336atf-13736 PDF

    GHZ micro-X Package

    Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
    Contextual Info: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		at-30511ot-143ot-23at-30533+15at-31011at-31033atf-45101atf-45171atf-46101ghz micro-x packagehewlett-packard micro-xs parameters for atf 10136micro-x200 mil beo packageat-32032atf-13336atf-13786at42010atf-10136 PDF

    gaas fet micro-X Package

    Abstract: P 55 NFO amplifier TRANSISTOR 12 GHZ GHZ micro-X Package MICRO-X ATF-10236 ATF-10236-STR ATF-10236-TR1
    Contextual Info: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 Features Description • Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its


    Original     		atf-10236gaas fet micro-x packagep 55 nfoamplifier transistor 12 ghz+4ghz micro-x packagemicro-xatf-10236-stratf-10236-tr1 PDF

    ATF-10736

    Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
    Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		atf-10236atf-10736an-g005atf10236+6atf10136atf-10136hp346amsa-0686tk11650utl05 PDF