AR25M Search Results

AR25B

Contextual Info: ARS25A-ARS25M,AR25A-AR25M HIGH CURRENT REVERSE VOLTAGE AUTOMOBILE RECTIFIER - 50 to 1000Volts FORWARD CURRENT - 25 Amperes ARS FEATURES AR ●Utilizing viod-free molded plastic technique ●Low power loss ●High Surge Capability .225 5.7 .215(5.5) ●High temperature soldering guaranteed:

AR25M

Abstract: ars 185 AUTOMOTIVE DIODE
Contextual Info: Shanghai Lunsure Electronic Technology Co.,LTD Tel:0086-21-37185008 Fax:0086-21-57152769 AR25M/ARS25M AVALANCHE AUTOMOTIVE DIODE Features High power capability Economical Avalanche voltage: 37 to 41 volts AVALANCHE VOLTAGE 37 TO 41 VOLTS CURRENT 25AMPS AR

Contextual Info: ARS25A-ARS25M, AR25A-AR25M HIGH CURRENT AUTOMOBILE RECTIFIER REVERSE VOLTAGE FORWARD CURRENT - 50 to 1000 Volts - 25 Amperes AR ARS FEATURES • Utilizing viod-free molded plastic technique • Low power loss • High surge capability • High temperature soldering guaranteed:

MARKING 25J

Abstract: AR25B AR25A AR25D AR25G ARS25A ARS25B ARS25D s25a ARS25M
Contextual Info: AR/S25A – AR/S25M W TE PO WE R SEM IC O ND UC TO R S 25A AUTOMOTIVE BUTTON DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data

C3502

Abstract: c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M
Contextual Info: AUTOMOTIVE RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +175°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Forward Peak Surge Current @8.3ms Superimposed Maximum Reverse Current @PRV @25°C T A I FM Surge APK IR

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

G1856

Abstract: Y296P g1750
Contextual Info: FAMILIES OF GENERAL INSTRUMENT PLASTIC RECTIFIERS Miniature Plastic Silicon Rectifiers Types: 1.0 to 1.5 AMPERES 1N4001 thru 1N4007 M100A thru M100M 1N5391 thru 1N5399 Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Cost Diffused Junction Low Leakage High Current Capability

Contextual Info: ARS25 / AR25 SERIES TSC S 25.0 AMPS. High Current Plastic Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 25.0 Amperes s ^ <• <5* Plastic material used carries Underwriters Laboratory Classification 94V-0 Low cost construction utilizing void-free molded

RS8KT

Abstract: RS8DT RS8JT rs8gt G1506 P600M byx55 GL852 THRU1N5408 AR25B
Contextual Info: QUICK GUIDE TO PLASTIC RECTIFIERS D041 D041 D041 D041 D0201 AD 0041 00201 AD D0201AD D0201AD D0201 AD D0201 AD D0201AD D0201AD BY396Pthru BY399P* D0201 AD lo A 10 10 10 10 1.2 1.5 2.0 30 3.0 3.0 3.0 3.0 3.0 3.0 (g)T* l°C| 75 100 75 55 55 75 at Tl 55 105

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

BY27-150

Abstract: GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700
Contextual Info: INTRODUCTION General Instrument Corporation Is a major multinational company manufacturing a wide range of products from data systems, broadband communications, and components to semiconductor products. The cor­ poration, which has been in existence over 50 years, has manufacturing

AR25J

Abstract: AR25 AR25A AR25B AR25D AR25G AR25K AR25M ARS25
Contextual Info: ARS25 / AR25 SERIES 25.0 AMPS. High Current Plastic Silicon Rectifiers Voltage Range 50 to 1000 Volts Current 25.0 Amperes ARS Features a a a a a a a AR Plastic material used carries Underwriters Laboratory Classification 94V-O Low cost construction utilizing void-free molded

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

BA159 equivalent

Abstract: B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358
Contextual Info: Typen - Vergleichsliste Typ Diotec 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5059 1N5059 1N5060 1N5061 1N5062 6A05/G 6A10/G 6A20/G 6A40/G 6A60/G 6A80/G 6A100/G Fam. R R R R R R P600A P600B P600D P600G P600J P600K P600M R R R R R R R 1B005 1B01 1B02