ARS25D Search Results

MARKING 25J

Abstract: AR25B AR25A AR25D AR25G ARS25A ARS25B ARS25D s25a ARS25M
Contextual Info: AR/S25A – AR/S25M W TE PO WE R SEM IC O ND UC TO R S 25A AUTOMOTIVE BUTTON DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data

C3502

Abstract: c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M
Contextual Info: AUTOMOTIVE RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +175°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Forward Peak Surge Current @8.3ms Superimposed Maximum Reverse Current @PRV @25°C T A I FM Surge APK IR

AR25B

Contextual Info: ARS25A-ARS25M,AR25A-AR25M HIGH CURRENT REVERSE VOLTAGE AUTOMOBILE RECTIFIER - 50 to 1000Volts FORWARD CURRENT - 25 Amperes ARS FEATURES AR ●Utilizing viod-free molded plastic technique ●Low power loss ●High Surge Capability .225 5.7 .215(5.5) ●High temperature soldering guaranteed:

Contextual Info: AR/S25A – AR/S25J 25A AUTOMOTIVE BUTTON DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data

Contextual Info: AR/S25A – AR/S25J WTE POWER SEMICONDUCTORS Pb 25A AUTOMOTIVE BUTTON DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data A Case: AR or ARS, Molded Plastic

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

Contextual Info: ARS25A-ARS25M, AR25A-AR25M HIGH CURRENT AUTOMOBILE RECTIFIER REVERSE VOLTAGE FORWARD CURRENT - 50 to 1000 Volts - 25 Amperes AR ARS FEATURES • Utilizing viod-free molded plastic technique • Low power loss • High surge capability • High temperature soldering guaranteed:

Contextual Info: AR/S25A – AR/S25J WTE POWER SEMICONDUCTORS Pb 25A AUTOMOTIVE BUTTON DIODE Features ! Diffused Junction ! ! ! ! Low Leakage B Low Cost C High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

mr852

Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Contextual Info: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

MUR420 diode

Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
Contextual Info: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal

diode A14A surface mount

Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
Contextual Info: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling

FE16B

Abstract: MBR0540LT1 FE16D BYV19-45 MUR420 replacement BYV33-45 FE16A BYV43-45 1N5821 substitution replacement UF5402
Contextual Info: Rectifier Cross Reference This Cross Reference lists Rectifiers by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional information, contact the nearest ON Semiconductor