ARS25B Search Results

MARKING 25J

Abstract: AR25B AR25A AR25D AR25G ARS25A ARS25B ARS25D s25a ARS25M
Contextual Info: AR/S25A – AR/S25M W TE PO WE R SEM IC O ND UC TO R S 25A AUTOMOTIVE BUTTON DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data

C3502

Abstract: c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M
Contextual Info: AUTOMOTIVE RECTIFIERS SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –65°C TO +175°C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Forward Peak Surge Current @8.3ms Superimposed Maximum Reverse Current @PRV @25°C T A I FM Surge APK IR

AR25B

Contextual Info: ARS25A-ARS25M,AR25A-AR25M HIGH CURRENT REVERSE VOLTAGE AUTOMOBILE RECTIFIER - 50 to 1000Volts FORWARD CURRENT - 25 Amperes ARS FEATURES AR ●Utilizing viod-free molded plastic technique ●Low power loss ●High Surge Capability .225 5.7 .215(5.5) ●High temperature soldering guaranteed:

Contextual Info: AR/S25A – AR/S25J 25A AUTOMOTIVE BUTTON DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data

Contextual Info: AR/S25A – AR/S25J WTE POWER SEMICONDUCTORS Pb 25A AUTOMOTIVE BUTTON DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data A Case: AR or ARS, Molded Plastic

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

Contextual Info: ARS25A-ARS25M, AR25A-AR25M HIGH CURRENT AUTOMOBILE RECTIFIER REVERSE VOLTAGE FORWARD CURRENT - 50 to 1000 Volts - 25 Amperes AR ARS FEATURES • Utilizing viod-free molded plastic technique • Low power loss • High surge capability • High temperature soldering guaranteed:

Contextual Info: AR/S25A – AR/S25J WTE POWER SEMICONDUCTORS Pb 25A AUTOMOTIVE BUTTON DIODE Features ! Diffused Junction ! ! ! ! Low Leakage B Low Cost C High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

BY27-150

Abstract: GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700
Contextual Info: INTRODUCTION General Instrument Corporation Is a major multinational company manufacturing a wide range of products from data systems, broadband communications, and components to semiconductor products. The cor­ poration, which has been in existence over 50 years, has manufacturing

Contextual Info: ARS25 / AR25 SERIES HICH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 25.0 Amperes FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ARS AR Low cost construction utilizing void-free molded

MARKING 25J

Abstract: AR25A AR25B AR25D AR25G ARS25A ARS25B ARS25D green color ring diode
Contextual Info: AR/S25A – AR/S25J WTE POWER SEMICONDUCTORS Pb 25A AUTOMOTIVE BUTTON DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Low Cost Construction Utilizing Void-Free Molded Plastic Technique B C Mechanical Data A Case: AR or ARS, Molded Plastic

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

Contextual Info: High Voltage Rectifier Assemblies Part No. CrossReference HC5 - Operating Temperature: -65 o C to 125oC Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25o C @ Rated Io Max. Reverse Current @ 25oC @ Rated PIV Package PIV V lFSM (A) V FM(V)