300US Search Results

Contextual Info: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

EAR99

Abstract: MAGX-002731-180L00
Contextual Info: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V1 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

Contextual Info: Part Number: Integra ILD1214M60 Preliminary TECHNOLOGIES, INC. 60W L-Band Radar LDMOS Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1214M60 is designed for the frequency band 1215-1400 MHz. Operating at 300us-10% pulse

HEMT 36 ghz transistor

Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

Contextual Info: 1.5 4 5 IN IN IN IN IN IN IN IN IN 5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G T L , LEAD TEMPERATURE 60 HE RESISTIVE OR INDUCTIVE LOAD T A , LEAD TEMPERATURE 0.375" 9.5mm LEAD LENGTH INSTANTANEOUS FORWARD CURRENT,(A) 50 10 75 1.0 0.1 Tj=25 C Pulse Width 300us

5KE440CA

Contextual Info: RATINGS AND CHRACTERISTIC CURVES 1.5KE6.8 THRU 1.5KE440CA FIG. 11 - INSTANTANEOUS FORWARD VOLTAGE CHARACTERISTIS CURVE FIG. 12 - BREAKDOWN VOLTAGE TEMPERATURE COEFFICIENT CURVE ⊙ V - TEMPERATURE COEFFICIENT -mv/℃ ℃ 100 FORWARD CURRENT 10 PULSE WIDTH=300US

1GM sot-23

Abstract: MMBTA05 MMBTA06
Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

GaN hemt

Abstract: Gan hemt transistor
Contextual Info: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Features •       GaN depletion mode HEMT microwave transistor Common source configuration

Contextual Info: MMBTA55 MMBTA56 Driver PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - (3) MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle <

Contextual Info: MMBT2222AW 3 * “G” Lead Pb -Free 1 2 SOT-323(SC-70) VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: NOTE 1 (NOTE 2) NOTES: 1.Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length, P.C.B mounted 2.Measured at1.0MHz and applied reverse voltage of 4.0V INSTANTANEOUS FORWARD CURRENT,(A) 50 10 1.0 0.1 Tj=25 C Pulse Width 300us 1% Duty Cycle

Contextual Info: INSTANTANEOUS FORWARD CURRENT, A 50 10 1.0 0.1 Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 1.3 1.5

MAGX-003135-120L00

Abstract: 003135 EAR99
Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Preliminary 28 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

Contextual Info: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 Features • • • • • • • • GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

MMBT2222

Abstract: MMBT2222A MMBT2222AW
Contextual Info: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

1GM sot-23

Abstract: MMBTA05 MMBTA06
Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0% 4. f T is defined as the freguency at which hfeextrapolates to unity

Contextual Info: MAGX-002731-180L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty Production V2 26 Oct 12 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

Contextual Info: 125 NOTE 1 j Storage temperature range stg NOTES: 1.Measured at1.0MHz and applied reverse voltage of 4.0V -65 to +150 INSTANTANEOUS FORWARD CURRENT,(A) 50 10 1.0 0.1 Tj=25 C Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 FORWARD VOLTAGE,(V) 1.3 1.5

EAR99

Abstract: HEMT 36 ghz transistor
Contextual Info: MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation

ues704

Contextual Info: RECTIFIERS UES704 UES705 UES706 UES704HR UES705HR UES706HR High Efficiency, 20A FEATU RES DESCRIPTIO N • • • • • • The UES704 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz.

27 Mhz power amplifier

Contextual Info: TOSHIBA {DIS CR ETE/ OP TO} 909725 0 T OS HIB A Sb DE I TOITSSO □00745b =1 DISCRETE/OPTO -6 7 SILICON NPN E PIT A X IA L PLANAR TYPE Unit in mm 27 MHz POWER AMPLIFIER APPLICATIONS. 10.S MAX., 0 3 . 6 ÍQ . 3 FEATURES: • Reconnnended for Output Stage Application of

Contextual Info: SF31 - SF38 CREAT BY ART Pb 3.0AMPS. Super Fast Rectifiers DO-201AD RoHS COMPLIANCE Features — High efficiency, low VF — High current capability — High reliability — High surge current capability — Low power loss — For use in low voltage, high frequency inventor,

SMC MARKING Sk

Abstract: SK520C
Contextual Info: SK52C - SK520C CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features — For surface mounted application — Metal to sillicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place — High surge current capability