A7A11 Search Results

DDR200

Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
Contextual Info: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).

NT5DS8M16FS-5T

Abstract: NT5DS8M16FS-6K NT5DS8
Contextual Info: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

Nanya nt5ds8m16fs

Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
Contextual Info: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8

NT5DS8M16FS-5T

Abstract: NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS
Contextual Info: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T

IS43R32800

Abstract: 43R32800
Contextual Info: IS43R32800 8Mx32 256Mb DDR Synchronous DRAM FEATURES • Vdd/Vddq=2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)

400F

Abstract: K9F4008W0A K9F4008W0A-TCB0 K9F4008W0A-TIB0 KM29W040AIT KM29W040AT k9f4008w0atcb0
Contextual Info: K9F4008W0A-TCB0, K9F4008W0A-TIB0 FLASH MEMORY Document Title 512K x 8 bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary Initial issue. April 10th 1998 1.0 1. Changed Operating Voltage 2.7V ~ 5.5V → 3.0V ~ 5.5V July 14th 1998

Contextual Info: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module

Contextual Info: 64MB, 128MB x72, ECC 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT5VDDT872A, MT5VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 184-Pin DIMM (MO 206) • JEDEC standard 184-pin, dual in-line memory

k54c

Abstract: FD19 TL16PNP550A
Contextual Info: TL16PNP550A ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH PLUG AND PLAY PnP AND AUTO-FLOW CONTROL SLLS190A- MARCH 1995 -REVISED MAY 1995 PnP Card Auto-Conflguratlon Sequence Compliant External Pin-to-Bypass PnP Auto-Conflguratlon Sequence In UART Bypass Mode, the Stand Alone

posted CAS jedec 1999

Contextual Info: PRELIMINARY 64Mb: x4, x8 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V

Contextual Info: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 MEG X 4 X 4 BANKS MT46V16M8 – 4 MEG X 8 X 4 BANKS MT46V8M16 – 2 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

Contextual Info: ADVANCE‡ 128MB, 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT1664AG MT8VDDT3264AG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)

Contextual Info: 64MB, 128MB X64 184-PIN DDR SDRAM DIMM DDR SDRAM DIMM MODULE MT4VDDT864A, MT4VDDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES Figure 1: 184-Pin DIMM (MO–206) • JEDEC standard 184-pin, dual in-line memory

Contextual Info: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module

Contextual Info: PREVIEW‡ 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT16VDDT3264A - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES • • • • • • • • • • • • • • • • •

micron ddr

Abstract: MT46V4M32
Contextual Info: ADVANCE‡ 128Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V4M32 - 1 Meg x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW) 100-Pin TQFP (Normal Bend Shown)

BA 5053 circuit diagram

Abstract: BA 5053
Contextual Info: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets

Contextual Info: ADVANCE‡ 256MB, 512MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT16VDDT3264AG MT16VDDT6464AG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)

Contextual Info: 128MB, 256MB ECC, x72 184-Pin DDR SDRAM DIMM DDR SDRAM DIMM MODULE MT9VDDT1672AG - 128MB MT9VDDT3272AG - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features Figure 1: 184-Pin DIMM • 184-pin dual in-line memory module (DIMM)

Contextual Info: PRELIMINARY‡ 128MB, 256MB, 512MB x72 184-PIN REGISTERED DDR SDRAM DIMMs DDR SDRAM DIMM MT9VDDT1672, MT18VDDT3272D, MT9VDDT3272, MT18VDDT6472D For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • • •

Contextual Info: IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: 128MB, 256MB ECC x72 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT9VDDT1672AG - 128MB MT9VDDT3272AG - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM • 184-pin dual in-line memory module (DIMM)

Contextual Info: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).