TP3N60 Search Results

MTP3N6

Contextual Info: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! TP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS

Contextual Info: * 5 SGS-THOMSON ilLiCTIKMDe 7 TP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V M TP3N60 M TP3N60FI • . . ■ ■ dss 600 V 600 V R DS on Id < 2.5 a < 2.5 a 3.9 A 2.5 A TYPICAL RDS(on) = 2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

G3N60B

Contextual Info: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, TP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and TP3N60B3 are MOS gated high

3N60C3D

Abstract: g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3
Contextual Info: HARRIS TP3N60C3D , HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A , 6 0 0 V , U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t Di o d es Features Packaging JEDEC TO-22QAB • 6 A, 600V at Tc = 25 °C

hg 3a 1004

Abstract: BT 139 F applications note
Contextual Info: TP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

TP3N60

Abstract: p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N60 M T P 3N 55 M T P 3N 60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TM O S POWER FETs 3 AMPERES rDS on = 2 5 OH M S 550 and 600 VOLTS These TM O S P ow er FETs are designed fo r high vo ltag e , high

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

3N60A4D

Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688
Contextual Info: HGT1S3N60A4DS, TP3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the TP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

Contextual Info: MOTOROLA Order this document by TP3N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3N 60E T M O S E -F E T ™ High Energy Pow er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to

G3N60B3

Abstract: Transistor No C110 transistor C110 tr c110 HGT1S3N60B3S HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 LD26
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, TP3N60B3 interrii J a n u a ry . m D ata S h eet 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and TP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

mtp3n

Abstract: TP3N60 A1412
Contextual Info: Si TYPE . TP3N60 TP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss TP3N60 TP3N60FI . . . . SGS-THOMSON ELiOT ö«S Id R üSion 600 V 600 V 2.5 2.5 ii il 3.9 A 2.5 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED R EPETITIVE AVALANCHE DATA AT 100°C