MTP3N Search Results

AN569

Abstract: MTP3N25E
Contextual Info: MOTOROLA Order this document by MTP3N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 250 VOLTS

Contextual Info: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

MTP3N55

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N55 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP3N80

Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
Contextual Info: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP3N95 CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N60 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N75 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

K 3267 fet transistor

Abstract: transistor 600 volts.50 amperes MTP3N100 221A-06 TMOS Power FET transistor 400 volts.50 amperes
Contextual Info: M O T O R O L A SC X S T R S / R F bflE » • b 3 b ? E 5 M □□'löbST 7S5 MOTbi MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP3N100 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N -C hannel Enhancem ent M o d e S ilic o n Gate TM O S POWER FET

Contextual Info: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2

UC3845BN USED CIRCUIT

Abstract: MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes
Contextual Info: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N50 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP3N40

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N40 P o w er Field E ffe c t Tran sistor IM-Channel Enhancem ent-M ode Silicon G ate TM O S T This TM O S P ow er FET is desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a pp licatio n s such as sw itch in g regu la to rs, c o n ­

Contextual Info: MOTOROLA Order this document by MTP3N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP3N50E TMOS E-FET™ High Energy Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to

MTP8N10

Abstract: MTP25N10 mtp7n06 MTP20N10 MTP7N15 irf510 MTP12N10 MTP5N06 MTP5N15 MTP20N08
Contextual Info: POWER TRAN SISTO RS — T M O S PLASTIC continued Plastic TM OS Power MOSFETS — TO-220AB (continued) C A S E 221A -02 rD S(on) (Ohm s) M ax (Amp) 150 2.4 1.25 20 2.5 1.5 MTP3N15 3 50 2.5 IRF623 4 40 0.9 MTP5N15 5 50 0.8 IRF621 4 40 75 0.7 3.5 M TP7N15

mtp3n6

Abstract: mosfet 600V 30A
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP3N60E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

MTP3N60

Abstract: MTP3N6 MTP3N60FI
Contextual Info: MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V 600 V < 2.5 Ω < 2.5 Ω 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

mtp3n6

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI VDSS RDS(on) ID 600 V 600 V < 2.5Q < 2.5 Q. 3.9 A

Contextual Info: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM3N60 MTP3N55 MTP3N60 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS TMOS POWER FETs 3 AMPERES 'DS(on) = 2.5 OHMS

2N3904

Abstract: AN569 MTP3N60E
Contextual Info: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS

TP3N55

Contextual Info: M O T O RO LA SC XSTRS/R F m e I .0 t.3 t,7 E S 4 0 0 0 ^ 7 0 Ö I MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTM3N60 MTP3N55 MTP3N60 Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S POWER FETs

511 MOSFET TRANSISTOR motorola

Abstract: MTP3N100E transistor 131-6 AN569
Contextual Info: MOTOROLA Order this document by MTP3N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP3N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1000 VOLTS

MTP6N55

Abstract: MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP2N90 MTP4N90 MTP8N45 irf8408 MTP3N80 irf840
Contextual Info: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5

mtp3n6

Contextual Info: MTP3N60E Designer’s Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast

CA111

Abstract: IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722 MTP7N18 MTP7N20
Contextual Info: This Type No. IRF621 IRF622 IRF623 By MTP7N18 Its MTP7N20 IRF721 MTP3N35 MTP3N40 IRF820 IRF822 IRF823 MTP2N45 MTP2N50 T0-220 37 TO-220 (37) T 0 22 0 (37) T0-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) T 0 22 0 (37) TO-220 (37) T0-220 (37) 70-220 (37) TO-220