TMM41 Search Results

TMM4164AP-20

Abstract: 4164AP-15 4164-A 4164A TMM41 4164AP
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 6 5 ,5 3 6 WORD X TMM4164AP-12, TMM4164AP-15 TMM41 64AP"20 1 BIT DYNAM IC RAM N CHANNEL SILICON GATE MOS DESCRIPTION M u ltip le x e d address in p u ts p e rm it th e T M M 4 1 6 4 A P to be packaged in a sta n d a rd 16 p in p la s tic D IP . T h is

TMM41256P

Abstract: tmm41256 TMM411000C-10 TMM411000C-12 TMM41 aaag
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM4110OOC-10 TMM411000C-12 1 ,0 4 8 ,5 7 6 W O R D X 1 BIT D Y N A M IC R A M S IL IC O N M O N O L IT H IC N -C H A N N E L S IL IC O N G A TE M O S PR ELIM IN A R Y D E S C R IP TIO N The T M M 4 1 1 0 0 0 C is th e new g e n e ra tio n

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM411001C-10 TMM411001C-12 1 ,0 48 ,5 7 6 WORD X 1 BIT DYNAMIC RAM SILICO N MONOLITHIC N -C H A N N EL SILICO N GATE MOS PRELIMINARY DESCRIPTION bit densities and is co m p a tib le w ith w id e ly available a u to m ated te stin g and inse rtio n e q u ip m e n t. System

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

tc511000

Abstract: tda 3611 d0251 TC8832F D025137 2pcs01 OVR BT2 A23 1101-01 csb655 TC8832
Contextual Info: TC8832F-1 •i TO SHI BA 1. G 0 2 5 1 3 3 143 m j O S 3 UC/UP b4E T> GENERAL T h e T C 8 8 3 2 F is a sin g le chip C M O S L S I for voice recording / play-back u sin g the A D M ( A d ap tive D elta M o d u latio n ). I t com poses a voice recording sy stem w ith a d yn am ic R A M for voice m em ory and

2SKI34

Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
Contextual Info: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t

ScansU9X26

Contextual Info: HNiny/lbCHblM MOflyjIflTOPHblf HH1KEKTPOH INJECTRON H M n y/lb C H b lfi M O fly jlflT O p H b lfi MH- >KeKTpoH TMM-41A npeflHa3HaneH fl/ia KOMMyTai^MM MMnyjlbCHOM MOLHHOCTM B MMny/ibCHbix MOflynflTopax paflMOTexHMHecKOii a n n a p a T y p b i. The TMM-41A injectron is used for

A23 1101-01

Abstract: tc8831 TR 610s
Contextual Info: je^JD^75M1 D0S5Dfc,4 T O S H IB A 1. • T0S3 UC/UP T C 8831F -1 bME J> v GENERAL The TC8831F is a single chip CMOS LSI for voice recording / play-back using the ADM ( Adaptive Delta Modulation ), It composes a voice recording system with a dynamic RAM for voice memory and

TC511000

Contextual Info: TC8832F-1 •i TO SHI BA 1. G 0 2 5 1 3 3 143 m j O S 3 UC/UP b4E T> GENERAL The TC8832F is a single chip CMOS LSI for voice recording / play-back using the ADM ( Adaptive Delta M odulation). It composes a voice recording system with a dynamic RAM for voice memory and

MN411

Abstract: a 512 j 18PIN MB811000-12 MB811001-12 MN411000-12 MN411001-10 MN411001-12 mn411000
Contextual Info: - * tt OC TRAC TRCY max ns> rain (ns) 4 ain (ns) TAH •in (ns) TCAD am D y n •y ñ r y y n RAM ( 1 0 4 8 5 7 6 x 1 ) «Ë (ns;) (ns) TDH min (ns) TP C tí TVÍCY •in TRWC V D D or V C C min (ns) I DD (V) («lA) 4 1 10 0 0 N ai À ÿ l [*typ] Ü max

Contextual Info: IN T E G R A T ED CIRCUIT TOSHIBA 1. T E C H N IC A L V O IC E R E C O R D IN G LSI TC8832F DATA GENERAL The TC8832F is a single chip CMOS LSI for voice recording / play-back using the ADM Adaptive Delta M odulation . It composes a voice recording system w ith a dynamic RAM for

TMM411001C-10

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 1 ,0 4 8 ,5 7 6 W O R D X 1 BIT D Y N A M IC R A M S IL IC O N M O N O L IT H IC N -C H A N fM E L S IL fC O N G A TE M O S T M M 4 1 1 1 C - 1 T M M 4 1 1 1 C - 1 2 PR ELIM IN A R Y D E S C R IP TIO N bit densities and is c o m p a tib le w ith w id e ly available

TMS4464

Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Contextual Info: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure

NMC3764-15

Abstract: MT4264-12 MT4264-15 TMM4164P-3 MT4264-20 TMS4164 TMM4164P UPD4164C-15 MSM3764-20RS pd4164d
Contextual Info: - 170 — 64K X u TRAC ít £ CC ns) TRCY min (ns) a TCAD min (ns) -V * TAH min (ns) n M0 S y y TP (ns) n vcY min (ns) R A M ( 6 5 5 3 6 x 1) D y n a m i c m tt V TDH min (ns) TRVIC min (ns) V D D or V C C (V) Â £ I DD max (ibA) I DD STANDBY ( I SB/ I SB2)

41256p

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM4 1 1 0OOC-10 TMM4 1 10OOC-12 1 ,0 48 ,5 7 6 WORD 1 BIT DYNAMIC RAM X SILICON MO NO LITHIC N-CHANNEL SILICON GATE MOS PRELIMINARY DESCRIPTION The T M M 4 1 1 0 0 0 C is th e n ew g e n e ra tio n d y n a m ic RAM organized 1 , 0 4 8 , 5 7 6 w o rd s by 1 bit,

TC8832

Abstract: ta7368 TC8834F
Contextual Info: • 0055276 2^2 « T 0 S 3 TOSHIBA UC/UP 1. TC8834N/F-111 b4E D GENERAL The TC8834 is a single chip CMOS LSI for voice recording / play-back using the ADM ( Adaptive Delta M odulation). It composes a voice recording system w ith a dynamic RAM for voice memory and

mkc 344

Abstract: 2K28
Contextual Info: HNiny/lbCHblM MOflyjIflTOPHblf HH1KEKTPOH INJECTRON H M n y/lb C H b lfi M O fly jlflT O p H b lfi MH- >KeKTpoH TMM-41A npeflHa3HaneH fl/ia KOMMyTai^MM MMnyjlbCHOM MOLHHOCTM B MMny/ibCHbix MOflynflTopax paflMOTexHMHecKOii a n n a p a T y p b i. The TMM-41A injectron is used for

TC8831F

Abstract: IPCS01 G025124 tc8831 TC8831F-1 tc511000 marking F59 DIODE UT-47 voice recording chip RS2-V
Contextual Info: TGTTaM'ì 00250fciL» =3313 • T0S3 TOSHIBA U C / U P TC8831F-1 b4E » GENERAL T h e T C 8 8 3 1 F is a sin g le c h ip CM O S L S I fo r voice re c o rd in g / p lay -b ack u s in g th e A D M ( A d a p tiv e D e lta M o d u la tio n ), I t com poses a voice re c o rd in g sy ste m w ith a d y n a m ic R A M for voice m em o ry a n d

M41464

Abstract: m41464ap AZ12 AZ-15 TMM41 TMM41464
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TM M41464AP/AT/AZ-10, TM M 41464AP/AT/AZ-12 TM M41464AP/AT/AZ-15 6 5 ,5 3 6 W O R D X 4 B IT D Y N A M IC R A M SILICON M O N O L I T H I C N ' C H A N N E L S I LI C O N G A T E M O S DESCRIPTION The T M M 4 1 4 6 4 A P /A T / A Z

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

TMM41256AP-10

Abstract: TMM41257P-15 UPD41256V-20 V53C256-80 6256 RAM V53C256-10 16PIN TMM41256C-15 V53C256 upd41256c-20
Contextual Info: - 186 2 5 6 K X i&KiSH m % tfc £ ro A nM0 S ••/ * y D y n a m i c ;/ ft ft TWCY min ns TDH min (ns) TRWC iin (ns) TRAC max (ns) TRCY min (ns) TCAD min (ns) TAH (ns) TP min (ns) RAM (2 62 1 4 4 x 1) 9 V D D or V C C (V) I DD max (mA) 1 6 P I N X 'h »

TMS4464-10

Abstract: TMS4464 TMM41464P-12 41464 RAM V53C464-80 TMS4464-15 M 41464 41464 TMM41464P-15 s3c46
Contextual Info: 195 - 2 5 6 K X m ít t i % TRAC max ns CC) TRCY min (ns) nM0 S 'f V TCAD rain (ns) + > TAH min (ns) Dy na mi c RAM (6 5 53 6 x 4 ) TP rain (ns;) TWCY min (ns) M % tí TDH nin (ns) TRWC Bin (ns) V D D or V C C (V) 1 Dû nax (mA) 18PIN À I DD STANDBY ( I SB/1 SB2)

M41256A

Abstract: MM41256A
Contextual Info: mmmm TOSHIBA MOS MEMORY PRODUCTS 2 6 2 , 1 4 4 W O R D X1 BIT D Y N A M IC RAM SILICON M O N O L IT H IC N -C H A N N E L SILICON GATE M O S T M M 4 1 2 5 6 A P /A T /A Z -1 0 , T M T M M 4 1 2 5 6 A P /A T /A Z -1 5 M 4 1 2 5 6 A P /A T /A Z -1 2 DESCRIPTION