1001C Search Results

KW1-1001CRB

Contextual Info: LUCKY LIGHT KW1-1001CRB DATA SHEET QC: Part No. ENG: KW1-1001CRB Spec No. Prepared By: S/N-030813011D Page 1 of 4 LUCKY LIGHT Features ♦ 1.0"Single Digit Super Red ♦ Common Cathode Common PIN 4 And PIN 11 ♦ Black Face，White Segment Package Dimension:

KW1-1001CGA

Contextual Info: LUCKY LIGHT KW1-1001CGA DATA SHEET QC: Part No. ENG: KW1-1001CGA Spec No. Prepared By: S/N-030812011D Page 1 of 4 LUCKY LIGHT Features ♦ 1.0"Single Digit Super Green ♦ Common Cathode Common PIN 3And PIN 8 ♦ Gray Face，White Segment 25.4(1.00") Package Dimension:

LM8362

Abstract: class 12 datesheet datesheet b a LM6162J/883 LM6361 E20A J08A LM6162N LM6362 M08A
Contextual Info: S e m i c o n d u c t o r LM6162/LM6262/LM6362 High Speed Operational Amplifier General Description The LM6362 family of high-speed amplifiers exhibits an ex­ cellent speed-power product, delivering 300 V/|u.s and 100 MHz gain-bandwidth product stable for gains as low as

2SC1905

Abstract: ic5 321
Contextual Info: Power T ransistors 2SCl?QS H 2SC1905(H) Silicon PNP Triple-Diffused Planar Type Package’Dimensions Horizontal Deflection Driver for Color TV set Unit,! mm • Features • High collector-emitter voltage 1 0 .5 ± 0 .5 ( V ceo ) • Large collector power dissipation (Pc)

DH47

Abstract: BUK571 BUK571-100A BUK571-100B buk541-100 K571
Contextual Info: Philips Components D ata sheet status Prelim inary specification date of issue M arch 1991 R eplaces B U K 54 1-1 00A /B BUK571-100A/B PowerMOS transistor Logic level FET SbE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

OR3LP26B

Abstract: OR3T20 ORT8850 7ba2 diode pb7d
Contextual Info: Preliminary Data Sheet April 2001 PayloadPlus /APC UTOPIA Slave Bridge Introduction Features The PayloadPlus/ATM port controller APC universal test and operations PHY interface for ATM (UTOPIA) slave bridge, also known as the PayloadPlus APC wedge (PAW) or the Atlanta™ interface

333S

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO ¿ToJhìiu Dlf| T D T 7 E S 0 ODltjHbQ 4 f "TD 90D 16260 SEMICONDUCTOR UF-33-3f M G 1 0 0 G 1 J L 1 M G 1 0 0 G 2 C L 1 TECHNICAL DATA M G 1 0 0 G 2 D L 1 -0E¡> d cs W eight : 205g U n it in mm NVJvrWT

SN54LVT18502

Contextual Info: SN54LVT18502 3.3-V ABT SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVERS SCBS669-JULY 1996 M e m b e r of the Te x a s I n s t r u m e n t s S C O P E F a mi l y o f Testabil ity P r o du c t s C o m p a t i b l e With the I EEE S t a n d a r d 11 4 9 . 1 - 19 9 0 J T A G Test A c c e s s P o r t and

Contextual Info: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

millenium MAS 6 PROGRAMMING

Abstract: HD6417709S EPM7128 Fuse RH A4 2A 250V adobe cs5 adobe cs5 tutorials bc 339 led moving message display S7 em 223 HD6417706
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

022AH

Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

4GB MLC NAND

Abstract: SAMSUNG NAND Flash MLC
Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

LP2S

Abstract: BUK545-50A 40608G
Contextual Info: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode

PD7811

Abstract: capacitor MKL d78pg11 153 SP-J eprom 2732A nec uPD7811 smh 210
Contextual Info: ¿/PD78PG11 HIGH-END, 8-BIT, SIN G LE -C H IP N M 0 S m ic r o c o m p u t e r W ITH P IG G Y B A C K EPRO M W ML W NEC Electronics Inc. Description Pin Configuration The NEC /UPD78PG11 is a prototyping device used to emulate the masked-ROM //PD7811. The user can

SN54LVT18502

Contextual Info: SN54LVT18502 3.3-V ABT SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVERS SCBS669 – JULY 1996 D D D D D D D Member of the Texas Instruments SCOPE  Family of Testability Products Member of the Texas Instruments Widebus  Family State-of-the-Art 3.3-V ABT Design Supports

47mh smd

Abstract: inductor 680mH 5100 Power Supply Celestica DA101MC 481R0C SMD 1009C 56100C 47101 1800R 77205c
Contextual Info: Magnetic Products Inductors Pulse Transformers Current Sensing Transformers Databus Isolators Common-Mode Chokes www.murata-ps.com Magnetic Products Two essential elements of the vast majority of power electronics applications are filtering and isolation.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main