TMM411001C Search Results

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM411001C-10 TMM411001C-12 1 ,0 48 ,5 7 6 WORD X 1 BIT DYNAMIC RAM SILICO N MONOLITHIC N -C H A N N EL SILICO N GATE MOS PRELIMINARY DESCRIPTION bit densities and is co m p a tib le w ith w id e ly available a u to m ated te stin g and inse rtio n e q u ip m e n t. System

MN411

Abstract: a 512 j 18PIN MB811000-12 MB811001-12 MN411000-12 MN411001-10 MN411001-12 mn411000
Contextual Info: - * tt OC TRAC TRCY max ns> rain (ns) 4 ain (ns) TAH •in (ns) TCAD am D y n •y ñ r y y n RAM ( 1 0 4 8 5 7 6 x 1 ) «Ë (ns;) (ns) TDH min (ns) TP C tí TVÍCY •in TRWC V D D or V C C min (ns) I DD (V) («lA) 4 1 10 0 0 N ai À ÿ l [*typ] Ü max

TMM411001C-10

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 1 ,0 4 8 ,5 7 6 W O R D X 1 BIT D Y N A M IC R A M S IL IC O N M O N O L IT H IC N -C H A N fM E L S IL fC O N G A TE M O S T M M 4 1 1 1 C - 1 T M M 4 1 1 1 C - 1 2 PR ELIM IN A R Y D E S C R IP TIO N bit densities and is c o m p a tib le w ith w id e ly available