4164A Search Results

LB1816

Abstract: 4.608MHZ 4164A DIP28H ILB00653 ILB00655 ILB00656 ILB00657 ILB00658 ILB01220
Contextual Info: 注文コード No. N 4 1 6 4 B LB1816 No. N 4 1 6 4 B 22503 半導体ニューズ No.4164A とさしかえてください。 LB1816 モノリシックディジタル集積回路 ODD スピンドル用 1 チップ IC LB1816 は速度制御回路内蔵の三相ブラシレスモータドライバ IC であり光ディスクスピンドルモータ用に最適

ILB00656

Abstract: ILB00657 ILB00658 ILB01220 LB1816 DIP28H ILB00653 ILB00655 4164A
Contextual Info: 注文コード No. N 4 1 6 4 B LB1816 No. N 4 1 6 4 B 22503 半導体ニューズ No.4164A とさしかえてください。 LB1816 モノリシックディジタル集積回路 ODD スピンドル用 1 チップ IC LB1816 は速度制御回路内蔵の三相ブラシレスモータドライバ IC であり光ディスクスピンドルモータ用に最適

TMM4164AP-15

Abstract: TMM4164AP15 TMM4164P TMM4164AP-20 TMM4164AP-12 TMM4164 TMM4164AP12
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 6 5 ,5 3 6 T M M 4 1 6 4 A P - 1 2 , T M M 4 1 6 4 A P -15 T M M 41 6 4 A P 2 0 W O R D X 1 B IT D Y N A M IC R A M N CHANNEL SILICON GATE M O S DESCRIPTION M ultip le xed address inputs p e rm it the T M M 4164A P to be packaged in a standard 16 pin plastic DIP. This

AX2022

Abstract: TACT2150 D6142
Contextual Info: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline

27c eeprom

Abstract: 27C291 74TTL
Contextual Info: 0^1755 DG77HS TMS27C291, TMS27C292 16,384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ ONLY MEMORY SEPTEMBER 1988-R EV ISED APRIL 1988 • Single 5-V Power Supply • Pin Compatible with Existing 2K x 8 BIpolar/High-Speed CMOS EPROMs

Contextual Info: TEXAS INSTR -CASIC/MEMORY} Ì7 Ô Ë | flìtlTES D074Ô31 □ 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1988 262,144 x 4 Organization JD PACKAGE TOP VIEW Performance Ranges: AC C ESS AC C ESS AC C ESS TIM E TIM E TIM E • e 4 5 ns *a(CA)

K4164

Abstract: 5k4164 block stsu 536-WORD RAC120 M5K4116P msk4164 M5K4164AND-12 M5K4164AND-15 K4164A
Contextual Info: M ITSU B ISH I L S Is 4164AND-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1-bit d y n a m ic RAM s, fa b ric a te d w ith the high pe rform ance N-channel silicongate

nV300-24

Abstract: NV300
Contextual Info: RO Associates Inc. Caspian Drive Sunnyvale, CA 94089 Tel: 408 744-1450 Fax: (408) 744-1521 sales@roassoc.com nV300LF 82.5-120 Watts 300 VDC Input 1/2 Brick NanoVerter Series The nV300LF NanoVerter modules are high density DC-DC converters with an input range of 220-400 VDC. These supplies

Contextual Info: MITSUBISHI LSIs 4164AND-12, -15 6 5 5 3 6 -B IT 6 5 536-W O R D BY &-BIT DYNAMIC RAM D E S C R IP T IO N P IN C O N F IG U R A T IO N (TO P V IE W ) This is a fa m ily o f 65 536-word by 1-bit dynamic RAMs, fabricated w ith the high performance N-channel silicongate

TMS4500

Abstract: TMS4500A
Contextual Info: TM S4500A DYNAMIC RAM CONTROLLER D 2 6 7 4 , JA N U A R Y 1 9 8 2 TMS4500A . . . N PACKAGE Controls Operation of 8K, 16K. 3 2 K , and 6 4 K Dynam ic RAMs TOP VIEW One Package Contains Address M ultiplexer, Refresh Control, and Timing Control Operates from Microprocessor Clock

TMS44C256

Abstract: TMS44C256-10 bojf tms44c251
Contextual Info: • a ^ L lT S S Q O T b 'n ? Q ■ TMS44C256, TMS44C257 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES INSTR 2 SE ASIC/MEMORY N PACKAGE (TOP VIEW) 262,144 x 4 Organization Single 5-V Supply (10% Tolerance) DQlC 1 Ü 20 ]Vss DQ2[ 2 193 004 wC 3 18 ]DQ3

M5K4164ANP

Abstract: 2164 dynamic ram mcm6665 block stsu Intel 2164 DYNAMIC RAM 65536 M5K4164ANP-20 6665 RAM msk4164 RASH
Contextual Info: M IT S U B IS H I LS Is 4164ANP-20 6 5 53 6 -B IT 65536-W O RD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN C O N F IG U R A T IO N (TOP V IEW ) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1-bit d y n a m ic RAM s, fa b rica te d w ith the high p e rform ance N-channel silicongate

Contextual Info: 6^1725 SN54ALS229A, SN74ALS229A 1 6 X 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES TEXAS INSTR A S I C / flEM0 R Y 2SE D SN54ALS229A . . . J PACKAGE SN74ALS229A . . . DW OR N PACKAGE muapenae.ni Asychronous Inputs and Outputs I D2876 , MARCH 1986 —REVISED MAY 1986

5K4164ANP-20

Contextual Info: MITSUBISHI LSIs M 4164ANP-20 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T his is a fa m ily o f 65536-word b y 1-bit d y n a m ic R A M s , fab ricate d w ith the high p erform ance N-channel silicongate

TMS4C1024

Abstract: TMS4C1025-80 TMS4C1024-80 TMS4C1024-12 TMS4C1024/5/7S
Contextual Info: TMS4C1024, TMS4C1025, TMS4C1027 1 048 576-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M G S 0 2 4 F — MAY 1986 — R E V IS E D N O V E M B E R 1990 1 048 576 x D[ 1 W[ 2 1 Organization U RAS [ 3 Single 5-V Supply 10% Tolerance Performance Ranges: TMS4C1024-60

Contextual Info: • flU1725 GG774C15 fl ■ 1 SN74BCT2827A, SN74BCT2828A 10-BIT BUSfMOS MEMORY DRIVERS WITH 3-STATE OUTPUTS D 2 9 7 7 , APRIL 1 9 8 7 -R Ê V IS E D APRIL 1 9 8 8 5SE D DW OR NT PACKAGE TOP VIEW BICMOS Design Substantially Reduces Standby Current 25-0 Series Resistors at Outputs

Contextual Info: 1K x SN74ACT2151, SN74ACT2153 11 CACHE ADDRESS COMPARATORS _ D 3105, SEPTEM BER 19 8 7 -R E V iS E D MARCH 1990 Fast Address to Match Delay . . . 22 ns Max N PACKAGE TOP VIEW On-Chip Address/Data Comparator u R ESET [ 1 A4 [ A3 [ A2 [ A1 [ AO [ DO [

TMM4164AP-20

Abstract: 4164AP-15 4164-A 4164A TMM41 4164AP
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 6 5 ,5 3 6 WORD X 4164AP-12, 4164AP-15 TMM41 64AP"20 1 BIT DYNAM IC RAM N CHANNEL SILICON GATE MOS DESCRIPTION M u ltip le x e d address in p u ts p e rm it th e T M M 4 1 6 4 A P to be packaged in a sta n d a rd 16 p in p la s tic D IP . T h is

Contextual Info: RO Associates Inc. Caspian Drive Sunnyvale, CA 94089 Tel: 408 744-1450 Fax: (408) 744-1521 sales@roassoc.com nV300LF 82.5-120 Watts 300 VDC Input 1/2 Brick NanoVerter Series The nV300LF NanoVerter modules are high density DC-DC converters with an input range of 220-400 VDC. These supplies

aajf

Abstract: MM4164 5101 RAM TMS4161 GE capacitors 19L series DYNAMIC RAM 65536 TEXAS TMS4161FML TMS34061 TM41 105 M5E
Contextual Info: 0 ^ p Ü? £ TM4161GW4, TM4161GY4 65,536 BY 4 BIT MULTIPORT V ID E g JA M MODULES ADVANCE ^ in f o r m a t io n ¿op J i l ' l i f Ù>4! Î a ^/l^gwp<gy Ö U ftL r'i / k f • P k ’ /'-in r JAN U A R Y 1 9 8 6 T M 4 1 6 1 G W 4 . . . W SINGLE-IN-LINE PACKAGE*

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

TMS44C256

Abstract: sn74als6302 TMS4C1024 TMS4C1025-12 S4C1024 190TW TM024EAD9 tms*1024 TMS4C1024-12
Contextual Info: 0 ^ 1 7 5 5 007702=1 7 • TMS4C1024, TMS4C1025, TMS4C1027 1,048,576-BIT DYNAMIC RANDOM-ACCESS MEMORIES TEXAS INSTR N PACKAGE TOP VIEW 1,048,676 x 1 Organization Single 5-V Supply (10% Tolerance) • ACCESS ACCESS ACCESS TIME TIME TIME TMS4C102-10 TMS4C102.-12

sn74als6301

Abstract: sn74als6302
Contextual Info: SN74ALS6301, SN74ALS6302 DYNAMIC MEMORY CONTROLLERS D 2 9 0 0 , JA N U A R Y 1 9 8 6 -R E V IS E D M ARCH 1 98B Provides C ontrol for 1 6 K , 6 4 K . 2 5 6 K , and 1 M D yn am ic R A M s SN74ALS6301. S N 74A L S 63 02. . H igh est-O rder T w o -A d d re ss Bits S elect One

4164A

Abstract: 3A5 tube
Contextual Info: r TEXA S INSTR { A S I C / M E M O R Y } 17- D Ë J flTbl7ES 0 D 7 4 Ö 3 S A T - V 6 - Z 3 ~IS SMJ4C1027 1,048,576-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1 9 8 8 1,048,576 x 1 Organization JD PACKAGE TOP VIEW Single 5-V Supply (1 0 % Tolerance) DC Performance Ranges: