TLP641
Abstract: TIP641 TIP642 pn junction diode texas instruments LCM 1601 TIP640 T1P640 TIP645 TIP646 TIP647
Contextual Info: TYPES TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP645, TIP646, TIP647 175 W at 2Ei°C Case Temperature • Min hpE of 1000 at 4 V, 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating
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tip640tip641tip64ztip645+8tip646tip647100-mjtlp641tip642pn junction diode texas instrumentslcm 1601t1p640
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lt 5234
Abstract: Tip640 IP645 DEJJ
Contextual Info: TEXAS INSTR - COPTO} 8961726 TE XAS ^ 2 De | fl=ìfc:175t, 0D3bT7D INSTR COPTO D 62C 3 6 97 0 TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary use with T IP645, TIP646, TIP647
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tip640tip641tip642ip645+5tip646tip647t-33-29lt 5234dejj
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TIP641
Abstract: TIP640
Contextual Info: TYPES TIP64Q. TIP641. TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS 175 W at 25°C Case Temperature • Min hFE °f 1000 at 4 V, 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating device schematic TYPES TIP640, TIP641, TIP642 BULLETIN NO. OL-S 7111642, DECEMBER
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tip64qtip641tip642tip645+4tip646tip647100-mjtip640
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P647
Abstract: TLP647 npn tip TIP640 TIP641 TIP642 TIP-641 3987 777T TIP645
Contextual Info: SA N Y O NPN TIP640 TIP641 TIP642 SEMICONDUCTOR PNP TIP645 TIP646 TIP647 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLTS, 10 AMPERE HIGH CURRENT GAIN hFE = 4000 typ. @3V, 5A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @5A MONOLITHIC CONSTRUCTION WITH BUILT-IN
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tip640tip645tip641tip646+8tip642tip647p647tlp647npn tiptip-6413987777t
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tlp641
Abstract: IIP64 transistor 2N 3792 T1P640 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
Contextual Info: TYPES TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP645, TIP646, TIP647 175 W at 2Ei°C Case Temperature • Min hpE of 1000 at 4 V, 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating
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tip640tip641tip64ztip645+8tip646tip647100-mjtlp641iip64transistor 2n 3792t1p640tip642
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TLP647
Abstract: TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
Contextual Info: TYPES TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED IFOR COMPLEMENTARY USE WITH TIP640, TIP641, TIP642 175 W at 25°C Case Temperature • Min h f e of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100 mJ Reverse Energy Rating
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tip645tip646tip647tip640+6tip641tip642tlp647tip 642 transistortransistor 2n 3792bv 642
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TIP642
Abstract: TIP641 TIP640 tlp641 lN914 TIP645 TIP646 TIP647 TIP64 TIP-640
Contextual Info: TEXAS INSTR 8961726 -COPTO} TEXAS ^ 2 DE | a t t i v a t i INSTR COPTO 0D3bT7D 62C 3 6 9 7 0 TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R EVISED O C TO BE R 1 9 8 4 T-33-29 Designed For Complementary use with TIP645, TIP646, TIP647
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tip640tip641tip642tip645+7tip646tip647t-33-29tlp641ln914tip64tip-640
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TLP647
Abstract: CP1205 TLP645 TIP645 TIP640 T1P646 TIP641 TIP642 TIP646 TIP647
Contextual Info: Is TEX AS IN S TR -COPTO} m T| ooat.'m m 62C 36976 6 9 6 1 7 2 6 TEXAS INSTR <OPTO> TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1 984 • Designed For Complementary Use With TIP640, TIP641, TIP642 • 175 W a t 25°C Case Temperature
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tip645tip646tip647tip640+7tip641tip642t-33-31t1p646tlp647cp1205tlp645
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lt 5237
Abstract: lt 5236 LT 5238 TIP-641 T1P646 TIP645
Contextual Info: INSTR Is -COPTO} 6961726 TEXAS INSTR m T| ooat.'m m 62 C 3 6 9 7 6 <OPTO> TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP640, TIP641, TIP642 • 175 W a t 25°C Case Temperature
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tip645tip646tip647tip640+8tip641tip642currtip646lt 5237lt 5236lt 5238tip-641t1p646
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MC7805CK
Abstract: MC7812Ck MC7815CK MC7824CK LM340K-24 LM7812KC lm7805kc LM340K24 LM7824KC 78h05ck
Contextual Info: Selection of Equivalents for Monolithic Voltage Regulators, Darlington Transistors, Rectifiers and Switching Transistors LAMBDA TYPE * LAS723A LAS723B LAS1000 LAS1100 LAS1405 LAS1406 LAS1408 LAS1410 LAS1412 LAS1415 LAS14U LAS1505 LAS 1506 LAS1508 LAS1510
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las723alas723blas1100las1405+16lm123klm223klm323ksh0323las1406las1408mc7805ckmc7812ckmc7815ckmc7824cklm340k-24lm7812kclm7805kclm340k24lm7824kc78h05ck
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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bd157bd158bd159tip73b+16tip74tip74atip74btip75tip75atip75bmje4942sc1419bd 8042sd675mje104bd581bd135 curvesmj1000dts-40412n5037
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2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
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2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
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"Tektronix 475"
Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
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48/buxbux48bux48aampere32+16tip73btip74tip74atip74btip75tip75atektronix 475equivalent 2n6488tip42c equivalentbu108motorola darlington power transistormotorola 266 to-204aa transistord45h11 equivalent replacementpnp buxtransistor replacement table for transistortip3055 equivalent
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D42C5
Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
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mje16204tip73btip74tip74a+15tip74btip75tip75atip75btip75cd42c5transistor bc 6472n5302 ebpin out transistor tip2955bs170 replacement2sc141bu108bc 658motorola transistors mje3055 to 127mc7812 to-220
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mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
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mje521mje371tip73btip74+16tip74atip74btip75tip75atip75btip75cmje521 equivalentbu1082n3055 plastic2n6488 motorolamotorola transistors mje3055 to 1273904 transistorbdx54tip122 tip127 audio ampbu326bu100
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2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
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mje2955tmje3055ttip73btip74+16tip74atip74btip75tip75atip75btip75c2n3055bu108an415amje2955t stbdx542n3055 audio amplifier application notebu326bu100mje13005bdv64
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2n56302n60302n56312n6031+102n5631 equivalent2n5630 "cross-referencechomericsbu1082sa1046tip122 tip127 audio ampbu326bu1002sd313 equivalentnpn/tip42c as regulator
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BD179-10 equivalent
Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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bd179bd180bd179-10tip73b+14tip74tip74atip74btip75tip75abd179-10 equivalentbu1082sa10462sc7bdx54bux98abu326bu100bul1
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sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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mjl3281amjl1302atip73btip74+14tip74atip74btip75tip75asec tip41cmje4932sc14192sc32812n3055 audio output circuitbdw93mj1000bdw83buv98a cross reference2sc1943
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TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
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tip47e69369mjf47tip73b+14tip74tip74atip74btip75tip75atip75btransistor bc 384bu108bd139 equivalent transistor2n3055 equivalentrca1c03transistor bc 574bu326bu100
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Transistor 2sC1060
Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:
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bdw46bdw42/bdw47220abbdw42+15bdw47tip73btip74tip74atip74btransistor 2sc10602sd4602sc143all similar transistor 2sa715bu108mj4102sd404bd241cbut56bdw59
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MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
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mj11018mj11022mj11017mj11021+9tip73btip74tip74atip74bmj11017 equivalentbu108bu326bu100mje3055t
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