TIP152 Search Results

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP152 Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage« : V(BR)CEO= 400V(Min.) • Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max.)@ lc= 5A

by205

Abstract: by205 diode BY205/600 tip150 BY205-600 IRF140 TIP151 TIP152 diode by205
Contextual Info: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at IC = 5 A ● ICEX(sus) 7 A at rated V(BR)CEO

Contextual Info: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE

tip150

Contextual Info: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE

TIP152

Abstract: by205 diode tip150 BY205-600 IRF140 TIP151 diode by205
Contextual Info: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE

tip152

Contextual Info: Enter Your Part # Home Online Store TIP152 Availability Buy TIP152 at our online store ! Diode s Transistors TIP152 Information Inte grate d C ircuits O ptoe le ctronics Thyristors C ate gory » Transistors C lass » Darlington Transistors Type » NPN Products

darlingtion transistor 2 amp

Abstract: npn darlington 400v 1.*a npn darlington transistor 150 watts NPN transistor Ic 50A td tr ts tf 10 amp npn darlington power transistors TIP152 "Darlington Transistor" darlington power transistor NPN Transistor 1.0A 400V NPN Transistor 50A 400V
Contextual Info: TIP152 NPN Silicon power darlington transistors are designed for use in automotive ignition. Switching and motor control applications. Features: • • • Pin 1. Base 2. Collector 3. Emitter 4. Collector Case Collector-emitter sustaining voltage VCEO(SUS) = 400V (minimum).

300V transistor npn 2a

Abstract: 300V switching transistor NPN Transistor 10A 400V TIP151 Diode 400V 1.5A NPN Transistor 1.5A 400V NPN Transistor 10A 400V to 92 tip152 TRANSISTOR VCE 400V 500mA TIP150
Contextual Info: TIP150, TIP151, TIP152 Silicon NPN Power Darlington Transistor Description: The TIP150, TIP151, and TIP152 are silicon NPN power Darlington transistors in a TO220 type package designed for use in automotive ignition, switching, and motor control applications.

Contextual Info: TIPI 50, TIPI 51, TIP152 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • 80 W at 25°C Case Temperature • 7 A Continuous Collector Current • 10 A Peak Collector Current • Maximum VCE Satj of 2 V at lc = 5 A •

diode by205

Abstract: by205 diode TIP150 TIP152 BY205-600 BY205/600 IRF140 TIP151 TIP150 TO220 diode by205 400
Contextual Info: TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE sat of 2 V at I C = 5 A B 1 ● ICEX(sus) 7 A at rated V(BR)CEO C 2 E 3 TO-220 PACKAGE

TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

TIP152

Abstract: TIP150 TIP151 IC350
Contextual Info: SavantIC Semiconductor Product Specification TIP150/151/152 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON APPLICATIONS ·For use in automotive ignition,switching and motor control applications PINNING PIN DESCRIPTION 1 Base

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power