SIF912EDZ Search Results

SiF912EDZ

Contextual Info: SPICE Device Model SiF912EDZ Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SIF912EDZ

Contextual Info: SiF912EDZ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFETS: 2.5-V Rated

SiF912EDZ

Abstract: s2mc
Contextual Info: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated

S-50131-Rev

Abstract: 50131 SiF912EDZ
Contextual Info: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.019 @ VGS = 4.5 V 10.7 0.0195 @ VGS = 4.0 V 10.5 0.022 @ VGS = 3.1 V 9.9 0.027 @ VGS = 2.5 V 9.0 D TrenchFETr Power MOSFET: 2.5-V Rated

SiF912EDZ

Abstract: 3437S
Contextual Info: SPICE Device Model SiF912EDZ Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiF912EDZ

Abstract: S82350
Contextual Info: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 10.7 0.0195 at VGS = 4.0 V 10.5 0.022 at VGS = 3.1 V 9.9 0.027 at VGS = 2.5 V 9.0 • Halogen-free • TrenchFET Power MOSFET: 2.5 V Rated

7409

Abstract: AN609 SiF912EDZ
Contextual Info: SiF912EDZ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SiF912EDZ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 10.7 0.0195 at VGS = 4.0 V 10.5 0.022 at VGS = 3.1 V 9.9 0.027 at VGS = 2.5 V 9.0 • Halogen-free • TrenchFET Power MOSFET: 2.5 V Rated

SMD resistors 1806

Abstract: SMD zener diode 202 1N4148WS
Contextual Info: Cell-phone Table of Contents AUDIO, Audio Control. 3 AUDIO, Earpiece. 5

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

NEC DIODES

Contextual Info: µPA2450/51B Series Power-Switching Solutions for Battery-Powered Applications Description Dual N-channel MOSFETs The µPA2450/51B Series of dual N-channel MOSFETs meets the challenges of battery-powered products with thin packages, low RDS ON , fast switching speed and integrated ESD protection

Siliconix mosfet guide

Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
Contextual Info: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

vishay power pak SO-8 package height

Abstract: si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8
Contextual Info: Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no