SI6963DQ Search Results

Si6963DQ

Contextual Info: Si6963DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D Si6963DQ 8 7 6 5 G1 D2 S2 S2 G2 G2 Top View D1 D2 P-Channel MOSFET

Contextual Info: T e m ic Si6963DQ Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) ±3.5 ±2.7 rDS(on) (£2) 0.050 @ VGs = -4.5 V 0.085 @ VGs = -2.5 V 20 Si S2 o p 6 6 P-Channel MOSFET P-Channel MOSFET TSSOP-8 Si6963DQ Top View Di D2

DIODE marking S4 97

Contextual Info: Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Si6963DQ

Contextual Info: SPICE Device Model Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6963DQ

Contextual Info: Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6963DQ G1 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET

Si6963DQ

Contextual Info: Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

BUSS SR-5 T3.15A 250V

Abstract: Si6963BDQ Si6963BDQ-T1-E3 Si6963DQ Si6963DQ-T1
Contextual Info: Specification Comparison Vishay Siliconix Si6963BDQ vs. Si6963DQ Description: Dual P-Channel, 2.5 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6963BDQ-T1 Replaces Si6963DQ-T1 Si6963BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6963DQ-T1-E3 (Lead (Pb)-free version)

Si6963DQ

Contextual Info: Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6963DQ G1 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET

A1818

Contextual Info: Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.5 0.085 @ VGS = - 2.5 V - 2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D Si6963DQ G2 6 S2 5 G2 Top View

Si6963DQ

Contextual Info: Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.5 0.085 @ VGS = - 2.5 V - 2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D Si6963DQ G2 6 S2 5 G2 Top View

Dual P-Channel 2.5-V (G-S) MOSFET

Abstract: MOSFET TSSOP-8 Si6963DQ
Contextual Info: Si6963DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.2 0.10 @ VGS = –2.5 V "2.4 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D Si6963DQ 8 7 6 5 G1 D2 S2 S2 G2 G2 Top View D1 D2 P-Channel MOSFET

Si6963DQ

Contextual Info: Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.5 0.085 @ VGS = - 2.5 V - 2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D Si6963DQ G2 6 S2 5 G2 Top View

Contextual Info: Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6963DQ G1 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET

diode 8a 600v

Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
Contextual Info: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2