STW9NB80 Search Results
STW9NB80 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| STW9NB80 | STMicroelectronics | N-CHANNEL 900V - 0.85 ? - 9.3A - TO-247 POWERMESH MOSFET | Original | 90.92KB | 8 | ||
| STW9NB80 | STMicroelectronics | N-Channel 800 V - 0.85 ohm - 9.3 A TO-247 PowerMESH MOSFET | Original | 268.79KB | 8 | ||
| STW9NB80 | STMicroelectronics | N-CHANNEL 900V - 0.85 Ohm - 9.3A - TO-247 PowerMESH MOSFET | Original | 49.52KB | 5 | ||
| STW9NB80 | STMicroelectronics | N-CHANNEL 800V - 0.85 ? - 9.3A - TO-247 PowerMESH MOSFET | Original | 86.83KB | 8 | ||
| STW9NB80 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 |
STW9NB80 Price and Stock
STMicroelectronics STW9NB80 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STW9NB80 | 560 |
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Buy Now | |||||||
STW9NB80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
9NB80
Abstract: STW9NB80
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Original |
stw9nb80o-2479nb80 | |
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Contextual Info: STW9NB80 N - CHANNEL 900V - 0.85ft - 9.3A - TO-247 _ PowerMESH MOSFET ADVANCE DATA V dss TYPE STW 9N B80 • . . . . 800 V R D S o n < 1 .1 a Id 9.3 A TYPICAL RDS(on) = 0.85 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES |
OCR Scan |
stw9nb80o-247p025p | |
MOSFET 800V 3A
Abstract: STW9NB80 AC to DC smps circuit diagram dc welding circuit diagram
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Original |
stw9nb80o-247mosfet 800v 3aac to dc smps circuit diagram+1 | |
STW9NB80Contextual Info: STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A TO-247 PowerMESH MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW9NB80 800V <1Ω 9A TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED |
Original |
stw9nb80o-247 | |
STW9NB80Contextual Info: STW9NB80 N - CHANNEL 900V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET ADVANCE DATA TYPE STW9NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 1.1 Ω 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES |
Original |
stw9nb80o-247 | |
diode PR 93A
Abstract: isd 2100 STW9NB80
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Original |
stw9nb80o-247diode pr 93aisd 2100 | |
fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
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Original |
stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 | |
ste30na50
Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
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Original |
ot-223stn4ne03lstn4ne03stn3ne06+15 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
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Original |
rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |
SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
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Original |
buz10buz11buz11abuz71+16 | |
MTP6N60E equivalent
Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
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Original |
irf820irf820airf820asirf820s+16 | |
fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
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Original |
stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 |