STH60N10 Search Results

STE150N10

Abstract: STH60N10
Contextual Info: STE150N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE150N10 100 V < 0.009 Ω 150 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER

airbag control unit

Abstract: gc352
Contextual Info: STH60N10 STH60N10FI SGS-THOMSON RÆOOi@[llL[l SÏB ÎMD©i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 S TH 60N 10FI V d ss R DS(on Id 100 V 100 V 0.025 Ü 0.025 a 60 A 36 A . . • . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

STW60N10

Abstract: STH60N10 STH60N10FI
Contextual Info: STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY

ste150n10

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T E 1 5 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE150N10 dss 100 V RDS on Id < 0 .0 0 9 Q 150 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING)

STE180N10

Contextual Info: £ j ï SGS-THOMSON S T E 1 8 0 N 10 ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE180N10 dss 100 V RDS on Id < 0 .0 0 7 Q. 180 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING)

STE180N10

Abstract: STH60N10
Contextual Info: STE180N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE180N10 100 V < 0.007 Ω 180 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER

STW60N10

Abstract: STH60N10 STH60N10FI
Contextual Info: STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.02 Ω

STH60N10

Abstract: STH60N10FI STW60N10
Contextual Info: STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI STW60N10 VDSS R DS on ID 100 V 100 V 100 V < 0.025 Ω < 0.025 Ω < 0.025 Ω 60 A 36 A 60 A TO-247 TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

schematic diagram dc-ac welding inverter

Abstract: schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840
Contextual Info: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0

W60N10

Abstract: H60N10 w60n max6024
Contextual Info: STH60N1OFI STW60N10 SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T H 60N 10 S T H 60N 1OFI STW 60N 10 . m . . . . . . V dss RDS on Id 100 V 100 V 100 V < 0.025 Ì2 < 0.025 Ì2 < 0.025 Ì2 60 A 36 A 60 A TYPICAL RDS(on) = 0.02 Q. AVALANCHE RUGGED TECHNOLOGY

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

Contextual Info: 7^ 5 3 7 • r z T Ä 7# emb a a s tti m s g t h _ S C S -T H O M S O N l* [í» ^ g « S S T E 1 5 0 N 10 N - CHANNEL ENH ANC EM ENT MODE PO W ER MOS TRA N SISTO R IN ISOTOP PACKAGE TYPE V STE150N10 dss 100 V R D S (o n Id < 0.009 n

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

Contextual Info: _ • G 7 l ^ 2 3 ? D G M S T tiB D 3 Ö ■ S G T H S G S -T H O M S O N i& J O T « ! S T H 6 0 N 10/FI S T W 6 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 STH60N1OFI STW 60N10 . ■ . . ■ . ■ . V dss R d S { o ii Id

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000