STH60N1OFI Search Results

W60N10

Abstract: H60N10 w60n max6024
Contextual Info: STH60N1OFI STW60N10 SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T H 60N 10 S T H 60N 1OFI STW 60N 10 . m . . . . . . V dss RDS on Id 100 V 100 V 100 V < 0.025 Ì2 < 0.025 Ì2 < 0.025 Ì2 60 A 36 A 60 A TYPICAL RDS(on) = 0.02 Q. AVALANCHE RUGGED TECHNOLOGY

Contextual Info: _ • G 7 l ^ 2 3 ? D G M S T tiB D 3 Ö ■ S G T H S G S -T H O M S O N i& J O T « ! S T H 6 0 N 10/FI S T W 6 0 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 60N 10 STH60N1OFI STW 60N10 . ■ . . ■ . ■ . V dss R d S { o ii Id