STH33N20 Search Results

100N20

Abstract: ste100n20 C59-60
Contextual Info: £ j ï SGS-THOMSON S T E 100N 20 ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE100N20 dss 200 V RDS on Id < 0.021 Q. 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

Contextual Info: m 7 ^ 5 ^53? 0045632 Sfl3 • S G T H f Z 7 SCS-THOMSON Ä 7# STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE100N20 V dss RüS on Id 200 V < 0.021 Q 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)

STE100N20

Abstract: Ultrasonic welding circuit diagram STH33N20FI E81743
Contextual Info: STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE100N20 200 V < 0.021 Ω 100 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)

ISD100A

Abstract: STE100N20 100R6 STH33N20FI DD45
Contextual Info: m 7 ^ 5 ^53? 0045632 Sfl3 • S G T H f Z 7 SCS-THOMSON Ä 7# STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE100N20 V dss RüS on Id 200 V < 0.021 Q 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)

33N20

Abstract: sth33n20fi
Contextual Info: SGS-THOMSON STH33N20 STH33N20FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STH33N20 STH33N20FI 200 V 200 V RDS on 0.085 0.085 n n Id 33 A 20 A . AVALAN C H E RUG G EDN ESS TECHNO LO GY . 100% AVALANC HE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

c3320

Abstract: l33a sth33n20fi UPS smk CIRCUIT STH33N20 STW33N20
Contextual Info: 2 < a O , ln é SGSTHOMSON E STH33N20/FI STW33N20 !ül gT[E M(gI i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T YPE S TH33N20 STH33N20FI STW 33N20 V dss R D S (o n Id 200 V 200 V 200 V < 0.085 n < 0.085 n < 0.085 n 33 A 20 A 33 A . TYPICAL RDS(on) = 0.073 Q

ld33a

Abstract: c3320 D33A STH33N20 STH33N20FI LD33 RC50 STW33N20 D-33A 7W237
Contextual Info: 7 T S T E 3 7 DO HSTHS 3G 3 « S Ü T H STH33N20/FI STW33N20 SGS-THOMSON ¡[iJ § «S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 33N20 S TH 33N20FI STW 33N20 • . . . . V d ss Ros(on Id 200 V 200 V 200 V < 0.085 Q < 0.085 £i < 0.085 n

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

STP3N60FI

Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
Contextual Info: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000

5358A

Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
Contextual Info: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE

M250V

Abstract: tsd4m250
Contextual Info: 3DE D • 7 ^ 2 3 7 0 0 3 0 5 5 0 .5 r r z ■ _ — i s G S-TH0MS0N - _ : TSD4M250F TSD4 M250V S C S -T H O M S O N M lltm ig ïlR M Q ig S N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TYPE V TSD4M250F/V