GC5606 Search Results

100N20

Abstract: ste100n20 C59-60
Contextual Info: £ j ï SGS-THOMSON S T E 100N 20 ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE100N20 dss 200 V RDS on Id < 0.021 Q. 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

Contextual Info: m 7 ^ 5 ^53? 0045632 Sfl3 • S G T H f Z 7 SCS-THOMSON Ä 7# STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE100N20 V dss RüS on Id 200 V < 0.021 Q 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)

ISD100A

Abstract: STE100N20 100R6 STH33N20FI DD45
Contextual Info: m 7 ^ 5 ^53? 0045632 Sfl3 • S G T H f Z 7 SCS-THOMSON Ä 7# STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE100N20 V dss RüS on Id 200 V < 0.021 Q 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)