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    NE76184A Search Results

    NE76184A Datasheets (11)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NE76184A
    NEC Semiconductor Selection Guide Original PDF 3MB 399
    NE76184A
    NEC Semiconductor Selection Guide 1995 Original PDF 3.25MB 226
    NE76184A
    NEC GENERAL PURPOSE FET N-CHANNEL GaAs MES FET Original PDF 69.6KB 10
    NE76184A
    Unknown FET Data Book Scan PDF 93.04KB 2
    NE76184A(11)
    NEC MES type field effect transistor Original PDF 69.6KB 10
    NE76184A(22)
    NEC MES type field effect transistor Original PDF 69.6KB 10
    NE76184AS
    NEC GENERAL PURPOSE L TO X-BAND GaAs MESFET Original PDF 50.19KB 4
    NE76184A-SL
    NEC GENERAL PURPOSE FET N-CHANNEL GaAs MES FET Original PDF 69.6KB 10
    NE76184A-T1
    NEC GENERAL PURPOSE FET N-CHANNEL GaAs MES FET Original PDF 69.6KB 10
    NE76184A-T1A
    NEC GENERAL PURPOSE FET N-CHANNEL GaAs MES FET Original PDF 69.6KB 10
    NE76184A-TI
    NEC GENERAL PURPOSE L TO X-BAND GaAs MESFET Original PDF 50.19KB 4

    NE76184A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SG 2368

    Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
    Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce­ ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its


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    ne76184a

    Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Id s = 10 m A L O W N O IS E F IG U R E : 0.8 dB typical at 4 GHz 24 H IG H A S S O C IA T E D G A IN : 21 12 dB typical at 4 GHz 18 L g = 1.0 tu n , W g = 4 0 0 jim


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    76184a

    Abstract: NE76184A/CEL
    Contextual Info: GENERAL PURPOSE LTO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s= 3 V, Ids= 10 mA FEATURES LOW NOISE FIGURE: 0.8 dB typical at 4 GHz HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz CD ~D o z U_ L g = 1.0 jim , Wg = 4 0 0 jim


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    ne76184ais12s21ine76184ase76184a-ti+3e76184a-sl76184ane76184a/cel PDF

    NE76184A at 5 GHz

    Abstract: NE76184A
    Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE: 24 0.8 dB typical at 4 GHz a> T} HIGH ASSOCIATED GAIN: 21 12 dB typical at 4 GHz 18 \£ 2 Lo s 1.0 im, Wo = 400


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    ne76184as12s21ne76184a-slne76184a at 5 ghz PDF

    NE76184AS

    Abstract: x-band power transistor NE76184A-SL NE76184A-TI
    Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184AS NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES 24 • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.0 µm, WG = 400 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


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    ne76184asne76184a-tine76184a-sl24-hour+1x-band power transistor PDF

    TC-2303

    Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
    Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its


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    ne76184ane76184a-slne76184a-t1ne76184a-t1a+5tc-2303nec 3377transistor nec d 582transistor nec d 587p1085 PDF

    NE32184A

    Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
    Contextual Info: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B


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    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器(µ PCx×××,µPG××××) 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


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    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


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    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


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    NE42484

    Abstract: NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324
    Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 84 1.78 ± 0.2 S 1.78 ± 0.2 D W S G 0.5 ± 0.1 ALL LEADS 1.0 MIN (ALL LEADS)- (84S/84AS) 1.7 MIN (ALL LEADS) (84-SL/84A-SL) 1.7 MAX


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    84s/84as84-sl/84a-slne32484ane42484a+8ne32584cne76084ne32984dne76184ane33284ane4248484asne324 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861 PDF

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    z80tmv20tmv20hltmv25tm+16v25hstmv30tmv30hltmv33tmv33atmv35tmmicroprocessor z80upd72020upc5102transistor 2p4mupd64872sd15572sj 3305upd77529transistor sod marking code 352amicro servo 9g tower pro PDF

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


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    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


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    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


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    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. [検索]ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して, 検索 F を クリックしてください。


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    transistor NEC D 587

    Abstract: NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A 149-8 MAG
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    transistor nec d 587ne76184ane76184a-slne76184a-t1+2ne76184a-t1a149-8 mag PDF

    NE67383

    Contextual Info: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1


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    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


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    d-40472i-20124i-00139d-30177+15gb-mk14d-81925s-18322f-78142e-28007uaa 1006manual* cygnus sl 5000transistor marking t79 ghzpc1658gnec ga fet marking code t79gaas fet t79pc1658mc-77122sc5431nec u71 PDF

    NE334S01

    Abstract: E7138 nec microwave NE76084 NE67383
    Contextual Info: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products


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    ne334s01e7138nec microwavene76084+1ne67383 PDF

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    x10679ejhv0sg00free transistor equivalent book 2scupa1556ahthe japanese transistor manual 1981+7samsung uhf/vhf tv tunermosfet cross-reference 2skpd431000a-xupper arm digital sphygmomanometer circuit diagrampd72001upc1237upc 2002 PDF