NE76184AS Search Results

NE76184AS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE76184AS		NEC	GENERAL PURPOSE L TO X-BAND GaAs MESFET	Original	PDF	50.19KB	4
NE76184A-SL		NEC	GENERAL PURPOSE FET N-CHANNEL GaAs MES FET	Original	PDF	69.6KB	10

NE76184AS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NE76184AS Abstract: x-band power transistor NE76184A-SL NE76184A-TI Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184AS NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES 24 • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.0 µm, WG = 400 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE	Original	NE76184AS NE76184AS NE76184A-TI NE76184A-SL 24-Hour x-band power transistor NE76184A-SL NE76184A-TI	PDF
SG 2368 Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its	OCR Scan	NE76184A NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A SG 2368 LS 2027 audio amp c 2688 nec LS 2027 amp	PDF
ne76184a Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Id s = 10 m A L O W N O IS E F IG U R E : 0.8 dB typical at 4 GHz 24 H IG H A S S O C IA T E D G A IN : 21 12 dB typical at 4 GHz 18 L g = 1.0 tu n , W g = 4 0 0 jim	OCR Scan	NE76184A NE76184A S12S21\| 0QL5522 NE76184AS NE76184A-TI NE76184A-SL b427525	PDF
transistor NEC D 587 Abstract: NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A 149-8 MAG Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
76184a Abstract: NE76184A/CEL Contextual Info: GENERAL PURPOSE LTO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s= 3 V, Ids= 10 mA FEATURES LOW NOISE FIGURE: 0.8 dB typical at 4 GHz HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz CD ~D o z U_ L g = 1.0 jim , Wg = 4 0 0 jim	OCR Scan	NE76184A NE76184A IS12S21I NE76184AS E76184A-TI E76184A-SL 76184a NE76184A/CEL	PDF
NE76184A at 5 GHz Abstract: NE76184A Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE: 24 0.8 dB typical at 4 GHz a> T} HIGH ASSOCIATED GAIN: 21 12 dB typical at 4 GHz 18 \£ 2 Lo s 1.0 im, Wo = 400	OCR Scan	NE76184A NE76184A S12S21\| NE76184A-SL. NE76184A at 5 GHz	PDF
TC-2303 Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085 Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its	Original	NE76184A NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A TC-2303 NEC 3377 transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085	PDF