MTP8P10 Search Results

8P08

Abstract: mtp8p08 MTP8P10 a043 221A-04 AN569 MTM8P08 MTM8P10 8P10 motorola
Contextual Info: MOTOROLA SC XSTRS/R im e F 'd I k3L?asM MOTOROLA □ a cì o a a 3 ? | - r - 3 m SEM IC O N D U C T O R TECHNICAL DATA M TM 8P08 M TM 8P10 MTP8P08 MTP8P10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S

TP8P10

Abstract: AN569 MTP8P10 si08 bbc ds 17
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP8P10 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancem ent-M ode S ilico n Gate X This TM O S Power FET is designed for medium voltage, high speed power switching applications such as switching regulators,

MTP8p10

Contextual Info: MOTOROLA SC XSTRS/R F böE ]> • b3b7ES4 OD'îflTO'î DOG ■ MOTb M O TO R O LA ■ SEMICONDUCTOR TECHNICAL DATA MTP8P10 Designer's Data Sheet P o w er Field E ffe c t Tran sisto r P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8 AMPERES RDS(on) = 0.4 OHM

8P08

Abstract: MTP8P08 mtp8p
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTM8P08 MTM8P10 MTP8P08 MTP8P10 Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e se T M O S P o w e r F E T s are d esig n ed fo r m ed ium vo ltag e ,

2N5337

Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Contextual Info: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar

*e13007

Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

EQUIVALENT FOR mjf18004

Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors

02D2G

Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot

221D

Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art

18004D2

Abstract: MJB18004D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package
Contextual Info: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar

221D

Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

BUL44

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductort BUL44 SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

TP12N10

Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection

MTP2P45

Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5

221D

Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light

221D

Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES

mjf18004

Contextual Info: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state−of−the−art

Contextual Info: ON Semiconductor BUL147 SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147 have an applications specific state−of−the−art die designed for use in electric fluorescent lamp ballasts to 180 Watts and

3500-TSI

Contextual Info: ON Semiconductor BUL146 BUL146F SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146/BUL146F have an applications specific state−of−the−art die designed for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power supplies for all types

1N5761

Contextual Info: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

MJE18002G

Abstract: MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.