MSM514102 Search Results

Contextual Info: O K I semiconductor MSM514102_ 4,194,304-Word x 1-Bit DYNAM IC RAM: STATIC CO LUM N M O DE TYPE GENERAL DESCRIPTION The MSM514102 is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514102 is OKI's CMOS silicon gate process technology.

MSM514102D

Abstract: MSM514102DL
Contextual Info: E2G0149-29-41 ¡ Semiconductor MSM514102D/DL ¡ Semiconductor This version: Apr. 1999 MSM514102D/DL 4,194,304-Word ¥ 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514102D/DL is a 4,194,304-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate

BL-70

Contextual Info: O K I Semiconductor MSM5 14102 B/BL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUM N MODE TYPE DESCRIPTION The MSM514102B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514102B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I semiconductor MSM514102A/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE GENERAL DESCRIPTION The MSM514102A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fab ricate the M SM 514102A/AL is O KI's CMOS silicon gate process

Contextual Info: O K I Semiconductor MSM514102A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE D ESCRIPTIO N The M SM 514102A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the M SM 514102A/AL is OKI's CMOS silicon gate process technology.

CA10

Abstract: MSM514102-10 MSM514102-70 MSM514102-80
Contextual Info: 5ÖE D b ? S 4 2 4 D DDlETfli SSñ « O K I J O K I SEMICONDUCTOR GROUP O K I semiconductor MSM514102 T ~ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TY PE G EN ER A L DESCRIPTION The MSM514102 is a new generation dynamic RAM organized as 4 ,194,304-word x 1-bit.

Contextual Info: 5ÛE D Hi t i T E HS MQ O K I O K I OOlBOSb 40b B O K IJ SE MI CONDUCTOR s e m i c o n d u c t o r G R OU P - r - H ê - z s - is- MSM514102A/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE G EN ER A L DESCRIPTION The MSM514102A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit.

MSM514102-10

Abstract: MSM514102-8A
Contextual Info: Mb E D • 3724240 G G O W l bbO H O K I J O K I sem iconductor_ T - v <-23 - J * M SM 514102 K 1 SEMICONDUCTOR g r o u p 4,194,304-WORDx 1-BIT DYNAMIC RAM: STATIC COLUMN MODE TYPE GENERAL DESCRIPTION The MSM514102 is a new generation dynamic RAM organized as 4,194,304 words by 1 bit.

Contextual Info: O K I semiconductor MSM514102_ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE G EN ERA L DESCRIPTION T h e M SM 514102 is a n e w g e n eratio n d ynam ic RAM o rg an ized as 4,19 4,30 4-w o rd x 1-bit. The te ch n o lo g y used to fa b ric a te th e M SM 514102 is O K I's CMOS silico n g a te process tech n o lo g y.

Contextual Info: O K I semiconductor MSM514102 A/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MOPE TYPE GENERAL DESCRIPTION The M SM 514102A /A L is a n e w g e n e ratio n d ynam ic RAM o rg an ized as 4,19 4,30 4-w o rd x 1-bit. T h e te c h n o lo g y used to fa b ric a te th e M S M 5 1 4 1 0 2 A /A L is O K I's CM O S silic o n g a te p ro cess

CA10

Abstract: ZIP20
Contextual Info: J2G0149-29-41 作成：1999年 4月 ¡ 電子デバイス MSM514102D/DL l MSM514102D/DL 4,194,304-Wordx1-Bit DYNAMIC RAM：スタティックカラムモード n 概要 MSM514102D/DLはCMOSプロセス技術を用いた4,194,304ワ−ド×1ビット構成のダイナミックランダ

CA10

Abstract: ZIP20
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

MSM514102DL

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

2M540

Abstract: 20-PIN 26-PIN ZIP20-P-400-W1
Contextual Info: O K I Semiconductor MSM5 1 4 1 02 A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The M S M 514102A /A L is a new generation dynam ic RAM organized as 4,194,304-w ord x 1-bit. The technology used to fabricate the M S M 514102A /A L is OKI's CMOS silicon gate process technology.

24 pin 16mbit DRAM

Abstract: MSM5116100A MSM6688 MSM6788 MSM6791 sad a4 a5 gnd 05 we331
Contextual Info: ¡ Semiconductor MSM6791 MSM6791 ¡ Semiconductor DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs MSM6688 and MSM6788 . FEATURES • DRAM (¥ 1-bit configuration)

b751 transistor

Abstract: 26-PIN ZIP20-P-400 b751
Contextual Info: O K I Semiconductor MSM5 14102B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION T he M SM 51 41 02 B/BL is a n e w generation d yn am ic R A M organized as 4,194,304-word x 1-bit. T he technology used to fabricate the M SM 5 1 4 1 0 2 B/BL is O K I's C M O S silico n gate process technology.

MSM511000

Abstract: MSM514400 MSM548263
Contextual Info: ––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Fast Access Operation for DRAMs ■ INTRODUCTION Increased processor speeds and high resolution graphics have placed added performance demands on the

DYNAMIC RAM CROSS REFERENCE

Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
Contextual Info: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102

Contextual Info: O K I Semiconductor MSM6791 DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solidstate recording and playback ICs MSM6688 and MSM6789A . FEATURES • DRAM (x 1-bit configuration) lM-bit DRAM (MSM511000A, MSM511001A): 8 pcs. can be connected.

MSM6389B

Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
Contextual Info: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258