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    MRF326 Search Results

    MRF326 Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRF326
    Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF 13.52KB 1
    MRF326
    Motorola NPN Silicon RF Power Transistor Original PDF 109.96KB 6
    MRF326
    Motorola European Master Selection Guide 1986 Scan PDF 127.74KB 1
    MRF326
    Unknown Transistor Replacements Scan PDF 95.55KB 1
    MRF326
    Unknown Transistor Replacements Scan PDF 79.06KB 1
    MRF326
    Unknown Transistor Replacements Scan PDF 88.52KB 1
    MRF326
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 89.14KB 1
    MRF326
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 128.61KB 1
    MRF326A
    Unknown Transistor Replacements Scan PDF 67.73KB 1

    MRF326 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2482 npn

    Abstract: 2482 TRANSISTOR
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed prim arily for w ideband large-signal output am plifier stages in the 100 to 500 MHz frequency range. • G uaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts


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    mrf3262482 npn2482 transistor PDF

    VK-200-19

    Abstract: VK200 ferrite choke
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed primarily for wideband large-signal output amplifier stages In the 100 to 500 MHz frequency range. • • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts


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    mrf326rf326vk-200-19vk200 ferrite choke PDF

    Contextual Info: MOTOROLA Order this document by MRF326/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 10/12/99 The RF Line MRF326 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.


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    mrf326/dmrf326 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Tran sisto r MRF326 . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts


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    mrf326 PDF

    5201 IC equivalent

    Abstract: MRF326 UG-58
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF326 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER


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    mrf3265201 ic equivalentug-58 PDF

    MRF326

    Abstract: Diode Motorola 316 erie redcap capacitors choke vk200 motorola rf power motorola rf device data book TRANSISTOR Z4 VK200
    Contextual Info: MOTOROLA Order this document by MRF326/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF326 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc


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    mrf326/dmrf326diode motorola 316erie redcap capacitors+5choke vk200motorola rf powermotorola rf device data booktransistor z4vk200 PDF

    MRF326

    Abstract: 1842I
    Contextual Info: MRF326 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF326 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 8.5 dB at 40 W/400 MHz


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    mrf3261842i PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


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    714u/1mhlw8000mhw707-2mhw707-1+8mrf947t1 equivalentmhw704cr2428mhw591mhw592mhw593mhw707mrf861 PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845 PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239 PDF

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


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    am1214-100am1214-200am1214-325am80912005+16am80912015am80912030am80912085am80912150am81214006am81214015tp2304tpv3100tp9383tp2330mrf2001pt9783pt9780tp8828fbly93amrf 406 application circuit PDF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


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    atv5030atv5090batv6031atv6060h+15atv7050bal99lt1bas16lt1bas21lt1bav70lt1bav74lt1mled96brx49 scrmrf549mrf660mrf548mmbr2857lt1cr2428mpf3822mrf548 motorola PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    MRF326

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 40 W — 225—400 MHz C O N T R O L L E D "Q " BROADBAND RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTO R . . . designed p r im a r ily fo r w id e b a n d large-signal o u tp u t a m p lifie r NPN SILICON


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    mrf326 PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    1phx11136q-14a5 gne mosfetjo35012n4427 equivalent bfr91+72n5032n5160 motorolabf431bfr96hy 1906 transistorjo2015kd 2060 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    TPV3100

    Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
    Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE


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    twf150-50fhf150-50shf250-50hf100-28+16hf220-28hf220-50tvu014hf75-50sasat25asi4003tpv3100tp3024ahf power amplifier tpv3100pt9783mrf466mrf4070tp9383tp2304mrf433mrf492a PDF

    transistors JX 6822 A

    Abstract: MATSUA compressor R12 scf 101 saw filter gte wiring diagram audio amplifier ic 6283 am/transistors JX 6822 A Sansui 21 i fs circuit diagram MC145202 addendum ne602 scrambler motorola power transistor 7752 MC145026
    Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . viii Chapter One Selector G u id e .1.1-1


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    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


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    MRF9742

    Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
    Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


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    mhw1184lmhw1224lmhw1254lmhw1304l+10mrf9742motorola master selection guide rfmhw591mhw704mhw593mhw707-2mhw592mrf947t1 equivalentmhw707-1mrf9282t1 PDF

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


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    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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