MBR150 Search Results

Contextual Info: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high

DO-204AL

Abstract: MBR150 MBR160
Contextual Info: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high

MBR150

Contextual Info: Bulletin PD-20589 rev. C 12/04 MBR150 MBR160 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/ Features The MBR150, MBR160 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching

Contextual Info: BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER MBR150- - -MBR160 VOLTAGE RANGE: 60 V CURRENT: 1.0 A FEATURES DO - 41 Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free

B150

Abstract: B160 MBR150 MBR160
Contextual Info: MOTOROLA Order this document by MBR150/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR150 MBR160 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

1117T

Contextual Info: MOTOROLA Order this document by MBR150/D SEM ICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers MBR150 MBR160 . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: DIGITRON SEMICONDUCTORS MBR150-MBR160 1A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified forward current 1 (VR(equiv) ≤ 0.2VR(dc), RӨJA = 80°C/W, PC board mounting, TA = 55°C)

DO-204AL

Abstract: MBR150 MBR160
Contextual Info: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

MBR120

Abstract: DO-213AB GLASS Schottky DSAIH00025395 MBR130
Contextual Info: DO-41 Glass 1 Amp Schottky Rectifier MBR115 thru MBR150 Use Advantages Low forward voltage drop. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss. Used in low voltage power supplies, high frequency inverters and converters,

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high

Contextual Info: MBR150, MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

B150

Abstract: B160 MBR150 MBR150RL MBR160 MBR160RL
Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap

B150

Abstract: B160 MBR150 MBR150RL MBR160 MBR160RL
Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

154w

Abstract: MBR1505 MBR151 MBR152 MBR154
Contextual Info: MBR1505 THRU MBR1510 DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation

MBR150

Abstract: MBR160
Contextual Info: MBR150 ~ MBR160 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 50 - 60 Volts IO : 1.0 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free

Contextual Info: VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

B150

Abstract: B160 MBR150 MBR160
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR150 MBR160 A x ia l Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: MBR150/MBR160 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for