MBR130 Search Results

MBR130T1G

Abstract: MBR130T3G
Contextual Info: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Diode SOd-123 marking cu

Abstract: MBR130T1 MBR130T3 Marking "s3" Schottky barrier
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

TL65

Abstract: fr53
Contextual Info: MBR130W SURFACE MOUNT SCHOTTKY POWER RECTIFIER Features: ˙ Guardring for Stress Protection PINNING PIN ˙ Low Forward Voltage ˙ 125 OC Operating Junction Temperature DESCRIPTION 1 Cathode 2 Anode ˙ Package Designed for Optimal Automated Board Assembly ˙ ESD Ratings: Machine Model, C;

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR130LSF Features • • • • Low Forward Voltage Drop High-Surge-Capability Super Low Forward Voltage Drop

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR130LSF Features • • • • Low Forward Volatge Drop High-Surge-Capability Super Low Forward Voltage Drop

MBR130P

Abstract: MBR120P
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.

MBR140P

Abstract: mbr130p MBR120P BR115P MBR115P 1N5817-19 J581 5819m
Contextual Info: 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA A X I A L LEAD RECTIF IERS . . . em ploying the S c h o ttk y Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry construction w ith oxide SCH OTTKY BARRIE R

Diode marking CODE 5M SOD

Abstract: SOD-123 marking code A1 MBR130T1G Diode SOd-123 marking cu 5M MARKING CODE SCHOTTKY DIODE marking code EE sod-123 marking code DV MBR130T1 MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR130LSF Features • • • • Low Forward Voltage Drop High-Surge-Capability Super Low Forward Voltage Drop

Contextual Info: MBR130HW SANGDEST MICROELECTRONICS SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0716, Rev. A Green Products MBR130HW SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G S3M-G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR130, NRVB130 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MARKING L3L

Abstract: MSC 0036 MBR130LSFT1 code l3l
Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBRS340T3G

Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
Contextual Info: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG

MBR130LSFT1G

Abstract: MBR130LSFT1
Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

schottky diode sod-123 marking code 120

Abstract: MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

mbr340m

Abstract: MBR-115 mbr320m mbr115
Contextual Info: MBR115P MBR120P MBR130P MBR140P See Page 3-63 M M O T O R O L A MBR320M MBR330M MBR340M H O T C A R R I E R P OW ER R E C T I F I E R S ^'• n D 'O v ' ,y i-.« - h o ttk s B a r r a r p r in c ip le t .a la r g p a r e a m é t - i i - r o s ■f <c o r . g o w - 'r

MBR130T1

Abstract: MBR130T1G MBR130T3 MBR130T3G
Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR130P Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)90Ô V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25¥ V(FM) Max.(V) Forward Voltage850m @I(FM) (A) (Test Condition)3.0

Contextual Info: MBR130 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)90’ V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25¥ V(FM) Max.(V) Forward Voltage.85 @I(FM) (A) (Test Condition)3.0

Contextual Info: MBR130W SURFACE MOUNT SCHOTTKY POWER RECTIFIER PINNING Features DESCRIPTION PIN • Low Forward Voltage • Package Designed for Optimal Automated Board Assembly 1 Cathode 2 Anode 2 1 MC Top View Marking Code: "MC" Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR130LSF Features • • • • Low Forward Voltage Drop High-Surge-Capability Super Low Forward Voltage Drop

MBR130LSFT1

Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package Using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection