MBR120 Search Results

MBR120

Abstract: L2L SOD-123FL
Contextual Info: MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G Surface Mount Schottky Power Rectifier http://onsemi.com Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

sod marking L2E

Abstract: MBR120ESFT1 MBR120ESFT1G MBR120ESFT3 MBR120ESFT3G MBR120 MBR120ESF
Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120VLSF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

123NQ080

Abstract: 123NQ100 HS123100 HS12380 HS12390 MBR120100 MBR12080 EE-125
Contextual Info: 120 Amp Schottky Rectifier S 1 2 3 8 0 —HS123100 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F G H J K L Microsemi Catalog Number HS12380* Industry Part Number 123NQ080 MBR12080 123NQ100 MBR120100 90V 90V 100V 100 V 1.56 38.86

Contextual Info: MBR12060CT Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current120 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage830m @I(FM) (A) (Test Condition)120

MBRM110LT1

Abstract: MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360
Contextual Info: CHAPTER 4 Index http://onsemi.com 645 Rectifier Device Index Device Number Page Device Number 1N4001 26, 29 MBR1100 1N4002 26, 29 1N4003 Page Device Number Page 19, 68 MBR735 20, 161 MBR120ESFT1 15, 17, 71 MBR745 20, 161 26, 29 MBR120ESFT3 15, 17 MBRA120ET3

Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130P

Abstract: MBR120P
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.

Contextual Info: MBR120L – MBR140L 1.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Forward Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application

MBR140P

Abstract: mbr130p MBR120P BR115P MBR115P 1N5817-19 J581 5819m
Contextual Info: 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA A X I A L LEAD RECTIF IERS . . . em ploying the S c h o ttk y Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry construction w ith oxide SCH OTTKY BARRIE R

Contextual Info: MCC MBR12020 THRU MBR120100
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 120 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

MBR120100

Abstract: MBR12020 MBR12030 MBR12035 MBR12040 MBR12045 MBR12060 MBR12080
Contextual Info: Transys MBR12020 R THRU MBR120100(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability 120Amp Rectifier 20-100 Volts Types Up to 100V VRRM HALF PACKAGE Maximum Ratings G Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

MBR120

Contextual Info: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

Contextual Info: 120 Amp Scottky Rectifier HS1 2 3 8 0 —HS1 231 00 Dim. Inches A B C D E F G H J K L Microsemi Catalog Number Industry P art Number HS12380* 123NQ080 MBR12080 Working Peak Reverse Voltage HS12390* HS123100* 123NQ100 MBR120100 Maximum Minimum 1.52 .725 .605

Contextual Info: MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G Surface Mount Schottky Power Rectifier http://onsemi.com Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

SOD-123LF

Abstract: MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G SOD-123FL
Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 120 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

203CNQ080

Abstract: 203CNQ100 CPT200100 CPT20080 CPT20090 MBR120100CT MBR12080CT MBR200100CT MBR20080CT
Contextual Info: Schottky PowerMod CPT20080-CPT200100 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT20080* 203CNQ080 MBR12080CT MBR20080CT CPT20090* CPT200100* 203CNQ100

Contextual Info: MBR12020CT thru MBR12040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR12020CT R THRU MBR120100CT(R) SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability 120Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

Contextual Info: MBR120 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)90’ V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25¥ V(FM) Max.(V) Forward Voltage.85 @I(FM) (A) (Test Condition)3.0