MBR12040CT Search Results

CPT12035

Abstract: CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT
Contextual Info: Schottky PowerMod CPT12035 - CPT12050 A Dim. Inches R Min. G B Q N Baseplate A=Common Anode W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT12035* CPT12040* CPT12045* CPT12050* MBR12035CT MBR12040CT

Contextual Info: MBR12020CT thru MBR12040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: Schottky PowerMod CPT12035 - CPT12050 A Dim. Inches R Min. G B Q N Baseplate A=Common Anode W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT12035* CPT12040* CPT12045* CPT12050* MBR12035CT MBR12040CT

MBR12020CT

Abstract: MBR12030CT MBR12035CT MBR12040CT MBR12060CT
Contextual Info: MBR12020CT thru MBR12040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: MBR12020CT thru MBR12040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 120 A Features • High Surge Capability • Types from 20 V to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

MBR12020CT

Contextual Info: Naina Semiconductor Ltd. MBR12020CT thru MBR12040CTR Silicon Schottky Diode, 120A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified

Contextual Info: MBR12020CT thru MBR12040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

t 63 n 1200

Contextual Info: MCC MCC Part Number M a x ip u n 1 Average Forward Current Peak j @ Half-Wave Reverse I Resistive Load YpKage I 60Hz . ',| If î a v @ T a Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current @ PRV @ 25°C Ta Ir If m V fm A mAdc A V o

25CC

Abstract: CPT12035 CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT 9416j
Contextual Info: Z c ” Schottky PowerMod — D “ r . — 2035 - ¥ Baseplate A=Common Anode V U t H h Baseplate Common Cathode 1 Fi r F , — i- I - 1 - o-W—j —N - o u • FT Notes: -A Baseplate D=Doubler 2050 ^ Dim. Inches Min. M illim eters Max. A -3.630

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR12020CT R THRU MBR120100CT(R) SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability 120Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

s4 43a

Abstract: CPT12035 CPT12040 CPT12045 CPT12050 MBR12035CT MBR12040CT MBR12045CT
Contextual Info: Schottky PowerMod CPT12035 - CPT12050 Dim. Inches Min. V Baseplate A=Common Anode V I u — I / Baseplate Common Cathode TÉi \ ! / u |- '\l ! -a I c T T E M icrosem i C atalog N um ber In d u s try P a rt N u m b e r C PT12035* CPT12 0 4 0 * CPT12 0 4 5 *

MBR12020CT

Contextual Info: MCC MBR12020CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR120100CT Features • • • • 120 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

B2X84C12

Abstract: MBR30100 MBR400100CT RS1005M UF5407G mur640 fst83100 MBR1535 MUR140G BC548
Contextual Info: MCC P A R T IN D E X PART NUMBER 1-5KE10 C {A) 1.5KE100(C)(A) 1-5KE11(C)(A) 1.5KE110fC)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1-5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C){A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1-5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

MBR12020CT(R)

Abstract: Twin Tower
Contextual Info: MBR 12020C T R DACO SEMICONDUCTOR CO., LTD. MBR 120100CT(R) T HRU SCHOTTKY DIODE MODULE TYPES 120A Features 120Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings A R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150