MBR12060 Search Results

Contextual Info: MBR12060CT Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current120 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage830m @I(FM) (A) (Test Condition)120

MBR12050CT

Abstract: br1204
Contextual Info: MO TO RO LA SC D I O D E S / O P T O bME ]> b3ti7255 ÜDflb3b7 233 MOT7 MBR12035CT MBR12045CT MBR12050CT MBR12060CT MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M BR12045CT and M BR12060CT are Motorola Preferred Devices SCHOTTKY BARRIER RECTIFIERS 120 AMPERES

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: MCC MBR12020 THRU MBR120100
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 120 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

MBR120100

Abstract: MBR12020 MBR12030 MBR12035 MBR12040 MBR12045 MBR12060 MBR12080
Contextual Info: Transys MBR12020 R THRU MBR120100(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability 120Amp Rectifier 20-100 Volts Types Up to 100V VRRM HALF PACKAGE Maximum Ratings G Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

t 63 n 1200

Contextual Info: MCC MCC Part Number M a x ip u n 1 Average Forward Current Peak j @ Half-Wave Reverse I Resistive Load YpKage I 60Hz . ',| If î a v @ T a Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current @ PRV @ 25°C Ta Ir If m V fm A mAdc A V o

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 120 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR12020CT R THRU MBR120100CT(R) SCHOTTKY DIODES MODULE TYPE 120A Features High Surge Capability 120Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

bys75-50

Abstract: MBR20030CTL mbr6535 357B-01 MBR6545 BYS75-45 MBR20020CTL BYS75-30 MBR12035CT MBR20035CT
Contextual Info: SCHOTTKY RECTIFIERS continued l0, AVERAGE FORWARD RECTIFIED CURRENT (A) 80 75 65 120 ^ J ' MBR20020CTL* 20 30 35 # Power Tap * D 05 VRR M »00 357B-01 Plastic 257-01 C A SE 200 MBR20030CTL* BYS75-30* MBR6535 MBR7535 MBR8035 MBR12035CT MBR20035CT MBR30035CT

MBR12020CT

Abstract: MBR12030CT MBR12035CT MBR12040CT MBR12060CT
Contextual Info: MBR12020CT thru MBR12040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

Contextual Info: MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 120 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: Naina Semiconductor Ltd. MBR12045CT thru MBR120100CTR Silicon Schottky Diode, 120A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.