KSC5047 Search Results

Contextual Info: KSC5047 KSC5047 Feature • High Current Gain • Low Collector Emitter Saturation Voltage TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

Contextual Info: KSC5047 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT GAIN LOW COLLECTOR EMITTER SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C o lle c to r B a s e V o lta g e V c bO 100 V C o lle c to r E m itte r V o lta g e VcEO 50 V

Contextual Info: KSC5047 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT GAIN LOW COLLECTOR EMITTER SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage C ollector Em itter Voltage Em itter Base Voltage C ollector Current Base Current C ollector Dissipation Tc=25 ”C

KSC5047

Contextual Info: KSC5047 KSC5047 Feature • High Current Gain • Low Collector Emitter Saturation Voltage TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

KSC5047

Contextual Info: KSC5047 KSC5047 Feature • High Current Gain • Low Collector Emitter Saturation Voltage TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

Contextual Info: KSC5047 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT GAIN LOW COLLECTOR EMITTER SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage C haracteristic VcBO Sym bol 100 V C ollector Em itter Voltage VcEO 50 V Em itter Base Voltage

Contextual Info: KSC5047 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT GAIN LOW COLLECTOR EMITTER SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollector Base Voltage V cbO 100 V C ollecto r E m itter Voltage VcEO 50 V Em itter Base Voltage

KSC5047

Contextual Info: KSC5047 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT GAIN LOW COLLECTOR EMITTER SATURATION VOLTAGE A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o lle c to r B a s e V o lta g e C h a r a c te r is tic VcBO Sym bol 100 V C o lle c to r E m itte r V o lta g e

KSC5047

Contextual Info: KSC5047 KSC5047 Feature • High Current Gain • Low Collector Emitter Saturation Voltage TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

Contextual Info: KSC5047 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT GAIN LOW COLLECTO R EMITTER SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Symbol Rating

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

TO-3P

Abstract: KSD1417 KSB1022 KSD1413 KSB1023 KSB1098 KSD1589 TIP140 TIP140F TIP145
Contextual Info: SAMSUNG ELECTRONICS INC büE D • 7 ^ b m M E GG1153b b ^ TRANSISTORS ■ SMäK FUNCTION GUIDE 22.4 TO-22CKF Type Transistors lc Condition D w ice Type V ceo NPN PNP lc <A> MIN V CE satXV) Condition TYP Vct (V) Condition hra Vee (V) M AX fl{MHz) Pc lc (A)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

BDX548

Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692
Contextual Info: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8

ksd 180

Abstract: ksd 180/60 ksd 250 se130 tip142
Contextual Info: TRANSISTO RS FUNCTION GUIDE 2. POWER TRANSISTORS 2.1. General Purpose Transistors 2.1.1 T O -1 2 6 Type T r a n s is to rs Device Type Condition Ic VCEO A (V) NPN PNP 0.1 180 KSC2682 KSA1142 200 KSC3502 300 KSC3503 0.1 VCE 200 Condition hFE Ic Ic VcE{sat)(V)

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

TO-3P

Abstract: tip142
Contextual Info: FUNCTION GUIDE TRANSISTORS 2.2.4 T0-220 F Type Transistors Condition Device Type PNP NPN Condition hre Vce (V) lc (A) MIN MAX VcEisatXV) Condition TYP Vce (V) lc (A) MM Hz) Pc •c (A) (A) 2 0.004 1.5 20 1.5 20 1.5 30 Ib (A) (V) 3 40 KSD1413 KSB1023 2 1 2K

thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

fqa38n30

Abstract: FGA25N120 FGA15N120ANDTU FQA11N90C TO-3P package SGH80N60UFTU FQA9N90 MARKING EA MOSFET IRFP460C FGA15N120ANTU
Contextual Info: Date Created: 2/8/2004 Date Issued: 2/23/2004 PCN # 20040605 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will