TIP145F Search Results

TIP147F

Abstract: TIP146F TIP145F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS

tip 147 TRANSISTOR

Abstract: TIP147F TIP146F TIP145F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ Vce = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to T IP 140F /141F /142F ABSOLUTE MAXIMUM RATINGS C haracteristic

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN h FE = 1000 @ V c e = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Com plement to TIP140F/141 F/142F ABSOLUTE MAXIMUM RATINGS

TIP145F

Abstract: TIP146F TIP147F TIP140 TIP141 TIP142 tip142 equivalent
Contextual Info: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor

TIP147F

Abstract: TIP146F TIP145F
Contextual Info: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor

145-F

Abstract: TIP145F 141F 147F TIP140F TIP141F TIP142F TIP146F TIP147F
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP TO- 3P Fully Isolated Plastic Package B C E For use in Power Linear and Switching Applications

Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP145F/146F/147F ABSOLUTE MAXIMUM RATINGS

TIP142F

Abstract: NPN Transistor VCEO 80V 100V TIP140 TIP140F TIP141 TIP141F TIP142
Contextual Info: TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor

Transistor Cross Reference

Contextual Info: TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor

TIP1477

Abstract: TLP147 k 3531 transistor TIP145F TIP146F TIP147F transistor K 3531 TIP147T pnp darlington to-220 10a
Contextual Info: SAMSU NG SEM ICONDUCTOR INC 14E D B.Tab'llME GG077SG 1 I PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAltf' MIN hFE=1000 @ V c e = — 4 V , lc = -5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE

TIP145F

Abstract: 141F 147F TIP140F TIP141F TIP142F TIP146F TIP147F
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP TO- 3P Fully Isolated Plastic Package B C E For use in Power Linear and Switching Applications

Contextual Info: TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor

TIP147F

Abstract: TIP146F TIP145F
Contextual Info: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor

TIP145F

Abstract: TIP146F TIP147F 147F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS

141F

Abstract: TIP147F tip npn TIP145F TIP146F 147F TIP142F 145-F
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN POWER TRANSISTORS TIP 140F, TIP 141F, TIP142F TIP145F, TIP146F, TIP147F TO- 3P Plastic Package B C E Power Darlingtons for Linear and Switching Applications

TIP145F

Abstract: TIP146F TIP147F
Contextual Info: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor

tip142

Abstract: TIP140F TIP141F TIP142F
Contextual Info: TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor

147F

Abstract: 141F TIP145F TIP146F TIP140F TIP141F TIP142F TIP147F
Contextual Info: Transys Electronics L I M I T E D SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP TO- 3P Fully Isolated Plastic Package B C E For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION

BU426AF

Abstract: T03P BU908F 2SA1301F 2SB817F 2SC3280F 2SD1047F 2SD1426F BU426F BU508AF
Contextual Info: T0-3P Fully isolated Plastic Package Transistors TO BE MOUNTED WITH SILICONE GREASE ON THE BACK SIDE, ENSURING BACK SIDE HOLES FILLED. Maximum Ratings Type No. Pola­ rity Electrical Characteristics Ta = 25CC, Unless Otherwise Specified " cbo ^CEO ^EBO PD

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

2sb817f

Abstract: 2SA1301F 2SA1302F 2SC3280F 2SC3281F 2SD1047F 2SD1426F 2SD1554F BU426AF BU426F
Contextual Info: TO-3P Fully Isolated Plastic Package Transistors MIN. DIM A 17.75 B 5.2 3.8 C D 0 1.9 14.50 E F 33.25 C 20.75 H 11.50 K 1.0 L 18.75 M 0.40 N 3.15 P 5.21 il MAX. 18.25 5.7 4.2 0 2.1 15.10 36.75 21.25 12.25 1,30 21.65 0.60 3.45 5.72 PIN 1. 2. 3. CONFIGURATION

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

TO-3P

Abstract: KSD1417 KSB1022 KSD1413 KSB1023 KSB1098 KSD1589 TIP140 TIP140F TIP145
Contextual Info: SAMSUNG ELECTRONICS INC büE D • 7 ^ b m M E GG1153b b ^ TRANSISTORS ■ SMäK FUNCTION GUIDE 22.4 TO-22CKF Type Transistors lc Condition D w ice Type V ceo NPN PNP lc <A> MIN V CE satXV) Condition TYP Vct (V) Condition hra Vee (V) M AX fl{MHz) Pc lc (A)