KM23C2001 Search Results

KM23C2001

Abstract: mask rom mask rom 2m 23C2001
Contextual Info: KM23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 262,144 x 8 bit organization Fast access time: 150ns (max.) Supply voltage: single + SV Current consumption Operating: 50mA (max.) Fully static operation

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 ODlbTbb Sbb KM23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using

Contextual Info: PRELIMINARY KM23C2001H CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES • • • • • • • • 262,144 x 8 bit organization Fast access time: 100ns (max.) Supply voltage: single + SV Current consumption Operating: 40mA (max.) Fully static operation

U275

Contextual Info: KM23C2001A G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001A is a fu lly s ta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silico n -g a te CMOS process tech nolog y.

23C2001

Contextual Info: CMOS MASK ROM KM23C2001 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 262,144 x 8 bit organization The K M 2 3 C 2 0 0 1 is a fu lly s ta tic m ask p ro g ra m m a b le R OM o rg a n iz e d 2 6 2 ,1 4 4 x 8 b it It is fa b ric a te d u s in g

Contextual Info: CMOS MASK ROM KM23C2001 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process te ch n o lc

23C2001

Abstract: 50-8S-G
Contextual Info: CMOS MASK ROM KM23C2001 2M-BH 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process technology. •

23C2001

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • VTbHlHB 0GlbT70 T^V «SIIGK KM23C2001A G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001A is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using

Contextual Info: PRELIMINARY KM23C2001H CMOS MASK ROM 2M-BH 256K x 8 CMOS MASK ROM FEATURES • 262,144 x 8 bil organization • Fast access lim e: 100ns (m ax.) • Supply voltage: sin g le + 5V • C urrent consum ption O p erating: 40m A (m ax.) • F u lly s tatic operation

23c2100

Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

23C8001A

Abstract: 23C8001 KM23C2001 2001h 23c4001
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM28C64A

Contextual Info: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

KM23C8001

Abstract: 32-sop
Contextual Info: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E