IXFN170N10 Search Results

IXFN170N10 Datasheets (2)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN170N10		IXYS	HiPerFET Power MOSFET	Original	PDF	346.4KB	4
IXFN170N10		IXYS	100V HiPerFET power MOSFET	Original	PDF	146.75KB	4

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IXYS Corporation IXFN170N10 Discrete Semiconductor Modules 170 Amps 100V
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Mouser Electronics	IXFN170N10					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others IXFN170N10
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Quest Components	IXFN170N10		32			1 $52.07 10 $52.07 100 $44.26 1000 $44.26 10000 $44.26	Buy Now

IXFN170N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR TJ = 25°C to 150°C	Original	200ns ixfn170n10 ixfk170n10 o-264 +4170n10 id125 ot-227 e153432	PDF
IXFN170N10 Abstract: 170N10 125OC IXFK170N10 Contextual Info: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C	Original	ixfn170n10 ixfk170n10 200ns o-264 +4170n10 id125 figure10 125oc	PDF
Contextual Info: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C	Original	ixfn170n10 ixfk170n10 200ns o-264 +3170n10 id125 figure10	PDF
D2562 Abstract: EE-SS3 Contextual Info: HiPerFET Power MOSFET IXFN170N10 IXFK170N10 vDSS Joîs R 100V 100V 170A 170A 10mQ 10mQ DS on 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions V V DGfi Ü) Tj = 25°C to 150°C TJ = 25°C to 150°C	OCR Scan	ixfn170n10 ixfk170n10 200ns o-264 +4170n10 ot-227 d2562 ee-ss3	PDF
Contextual Info: □ IXYS ADVANCE INFORMATION ^D25 100V 100V 170A 170A trr DS on a a IXFN170N10 IXFK170N10 D v DSS E E o o HiPerFET Power MOSFET 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol v Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions Td = 25°C to 150°C	OCR Scan	ixfn170n10 ixfk170n10 200ns o-264 +1170n10	PDF
BHRH Abstract: SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125 Contextual Info: ADVANCE INFORMATION HiPerFETTM Power MOSFET VDSS IXFN170N10 IXFK170N10 10mΩ 10mΩ trr 200ns 200ns TO-264 AA IXFK Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C 100 100 100 100 V V V GS V GSM	Original	ixfn170n10 ixfk170n10 200ns o-264 +6170n10 bhrh sot-227 package sot-227 b" dimensions 125oc d125	PDF
IXTN79N20 Abstract: IXFN48N50 IXFN120N20 IXFN27N80 IXFN36N60 IXFN73N30 IXTN21N100 IXFN106N20 IXFN130N30 IXFN150N15 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b K o p n y c e SOT-227B (ISOTOP) $ M pM bi IXYS C # e p a npM M eH eH M a: n p e o 6 p a 3 0 B a ie n M D C-DC, n po M biw ne rn-ib ie MMnynbCHbie 6jiokm nMTaHMfl, cucTeM bi	OCR Scan	ot-227b npe06pa30baienm flmana30h ot-55 +11ixtn21n100 ixfn27n80 ixfn36n60 ixfn48n50 ixfn55n50 ixfn130n30 ixtn79n20 ixfn120n20 ixfn73n30 ixfn106n20 ixfn150n15	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 f155-6a f155-10a f165-15a +11f175-25a irfb4115 bty79 equivalent diode skn 21-04 marking code w04 sot-23 bbc 598 479 diode mw 137 600g tfk 401 s 673 vishay telefunken tfk transistor infineon transistor marking w31 jys marking transistor	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	ao4405 ao4407 ao4408 ao4409 +16ao4410 ao4411 ao4413 ao4415 ao4422 ao4700 irf1830g irf1830 transistor irf1830g apm2054n equivalent apm2054n ap85l02h ap70n03s 2sk3683 ap70l02h 2sk2696	PDF
ixfh26n60q Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY	OCR Scan	si4466dy si4966dy si9925dy si9942dy +162sk1388 t0220ab irf7319 irf7413 irf7455 irl2203n ixfh26n60q 2sk2333 2sk2761 irf1405 buz345 bss89 irfp250n p9nb60 irfp260n 2sk2671	PDF
170n10 Abstract: vestas 185H10 197-IX Contextual Info: ADVANCE INFORMATION v DSS H iP e rF E T Pow er M O SFET 100V 100V 100V IXFK 170N10 100V Single MOSFET Die D ^D 25 185A 170A 185A 170A 1* D S o n 8m£2 10mi2 8mn 10mß 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol v DSS Test Conditions T j = 25°C to 150°C	OCR Scan	185n10 200ns 170n10 185h10 +3170h10 vestas 197-ix	PDF
IXFD14N80 Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50 Contextual Info: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max yp Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9	OCR Scan	ixfd76n07-12 xfd67n10 ixfd75n10 ixfd170n10 +14ixfd42n20 ixfd50n20 ixfd68n20 1xfd90n20q ixfd110n20 ixfd35n30 ixfd14n80 cmp 3.48 ixfh50n20 1xfh12n90 ixfn170n10 diode 348 ixfd21n50 ixfh21n50	PDF
Contextual Info: n ix Y S HiPerFET Power MOSFET IXFN 170N10 IXFK170N10 VDSS ^D25 100 V 100 V 170 A 170 A p DS on 10 mQ 10 mil Single M O S FE T Die Symbol Test Conditions VDSS v TCB Tj Tj VGS v GSM Continuous Transient Us ® u ® Ur Tc Tc Tc Tc Maximum Ratings IXFK IXFN	OCR Scan	ixfn170n10 ixfk170n10 o-264 ot-227 +1100ms	PDF
sot23 BS170 Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100 Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120	OCR Scan	bs107 bss123 bs170 bss138 +16bs108 bsn304 bss89 irfd310 irfd420 irfd210 sot23 bs170 2sk2671 p3nb60 ixfn27n80 irfl014n stp22ne10l irf6348 irf7305 rfp40n ixtn21n100	PDF