irfd121
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IR FD 120 IRFD121 IRFD122 IRFD123 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode S ilicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS{on = 0 3 0 H M 100 VOLTS
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irfd121irfd122irfd123 |
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irfd123
Abstract: 2501a IRFD120R IRFD121R IRFD122R IRFD123R IRF012
Contextual Info: Rugged Pow er M O S F E T s_ File Number 2036 IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros on = 0.300 and 0.400 N -C H A N N E L E N H A N C E M E N T M O D E Features:
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irfd120rirfd121rirfd122rirfd123r+40v-100virfd1232501airf012
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IRFD120
Abstract: IRFD121 IRFD122 IRFD123 irfd1201
Contextual Info: Standard Power MOSFETs - IRFD120, IRFD121, IRFD122, IRFD123 File Number 2315 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistore N -C H A N N EL E N H A N C EM EN T M O DE 1.1 A and 1.3 A, 60 V - 100 V rDsfoni= 0.3 O and 0.4 O
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irfd120irfd121irfd122irfd123+1irfd1201
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IRFD123
Abstract: IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334
Contextual Info: IRFD120, IRFD121, IRFD122, IRFD123 Semiconductor 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and
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irfd120irfd121irfd122irfd123+3irfd120 harrista17401tb334
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IRFD121
Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
Contextual Info: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and
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irfd121tb334ta17401irfd120+5irfd122irfd123es36rfd12rfd120
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1rfz44
Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)
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irfz20o-220irfz22irfz30+13irfz325to-220irl5101rfz44mfe92001rfz30irfz121rfz22vn10lpirfu9212irfu9220irfu9222irfu9022
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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1RFD123
Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*
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irfd120/121/122/12312or/121r/122r/123rirfd120irfd121+12irfd122irfd123irfd120rirfd121rirfd122rirfd123r1rfd123irfd123rfd120irfd 120irfd 123
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BUZ71A equivalent
Abstract: IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642
Contextual Info: y i/ iy j x iy i/ i F ix e d O u tp u t 10W CM O S Step-U p S w itc h in g R eg u lato rs _ F eatu res The MAX641/MAX642/MAX643 step-up switching regu lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range.
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max641/max642/max643max641/642/643buz71a equivalentirl734+4irf540max643xcsahow to stepup 1.5v to 5v, 12vtransistor+642
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IRL734
Abstract: IRZ14 rf513 MAX642 equivalent analog IRF513 MTM25N05L IR power mosfet switching power supply irf540 equivalent IRF540 n-channel MOSFET DC TO DC CONVERTER MAX643
Contextual Info: y i/iy jx iy i/i F ix e d O u tp u t 1 0 W C M O S S te p -U p S w itc h in g R e g u la to rs The M A X 6 4 1 /M A X 6 4 2 /M A X 6 4 3 s te p -u p s w itc h in g re g u lato rs are d e s ig n e d for m in im u m c o m p o n e n t D C -D C c o n v e rte r c irc u its in th e 5m W to 10W ra nge.
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max641/max642/max643max641/642/643max643xepamax643xesa_+12max643xeja_max643xmjairl734irz14rf513max642 equivalentanalog irf513mtm25n05lir power mosfet switching power supplyirf540 equivalentirf540 n-channel mosfet dc to dc convertermax643
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mfe9200
Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
Contextual Info: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0
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1rfd9120irfd9123irf09210-4rff230+13o-205afirff231t0-205afirff232irff233mfe9200f111irfd9213irfd9220irff110irff113irff120irf09120
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IRL734
Abstract: 1RF620 IRZ14 Diode c 642
Contextual Info: y i/iy jx iy i/i F ix e d O utput 10W CMOS S tep-U p S w itch in g R egulators _ F eatures The MAX641/MAX642/MAX643 step-up switching regu lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range. ♦ Fixed +5V, +12V, +15V Output Voltages
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max641/max642/max643max641/642/643max643xcpamax643xcsa+9max643xc/dmax643xepamax643xesamax643xejamax643xmjairl7341rf620irz14diode c 642
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IRL734
Abstract: IRF540 MAX641XEPA MAX642XCPA MAX642XCSA IRZ14 transistor irf620 linear applications of power MOSFET IRF640 how to stepup 1.5v to 5v, 12v Step-Up Voltage Regulator in TO-220
Contextual Info: y i/iy jx iy i/i F ix e d O u tp u t 1 0 W C M O S S te p -U p S w itc h in g R e g u la to rs The M A X 6 4 1 /M A X 6 4 2 /M A X 6 4 3 s te p -u p s w itc h in g re g u lato rs are d e s ig n e d for m in im u m c o m p o n e n t D C -D C c o n v e rte r c irc u its in th e 5m W to 10W ra nge.
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max641/max642/max643max641/642/643adjustax643xepamax643xesa_+12max643xeja_max643xmjairl734irf540max641xepamax642xcpamax642xcsairz14transistor irf620linear applications of power mosfet irf640how to stepup 1.5v to 5v, 12vstep-up voltage regulator in to-220
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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IRFD110
Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
Contextual Info: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5
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o-247o-204o-205o-220+16irfd113irfd111irfd123irfd121irff113irff111irfd110irf5134irf120irf5401rf542irf510irf522irf611-3irfd1z3irf143
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IRF8C30
Abstract: MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAF50 IRFAF52 IRFAG50 IRFBC32
Contextual Info: 257 - f M « tt fi ± £ Vd s or € t h fë Ta=25t3 Vg s * /CH Vd g (V) Id (V) (A) m m 1GSS Pt> V g s th) 1DSS (nA) (W) (MA) Vd s (V) (V) (V) '14 (Ta=25°C) Ciss Vd s = Vg s * /CH Vg s (V) ft Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ
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irfaf50o-204aairfaf521rfag40+12rfz42o-220abirfz44mfe910irf8c30mfe92001rfbc401rfz40irfd9010irfz30irfag50irfbc32
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620
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MPF89
Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
Contextual Info: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max
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irfd213irfd220irfd221irfd222+11irfd223irfd9120irfd9121irfd9210irfd9213irfd91103mpf89mpf66592 watt fetmpf910irfd9110
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TRANSISTOR IRFD120
Abstract: D82CL2 IRFD120
Contextual Info: F 5g M l ^ o [ M Ï S I F 1 IRFD120,121 P82CL2.K2 T 1.3 AMPERES 100,60 VOLTS RPS(ON = 0-3 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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irfd120d82cl200a//usirfd120/d82cl2+2irfd12vd82ck2transistor irfd120
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1RFD120
Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
Contextual Info: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode
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irfd210irfd211irfd212irfd213+6i0i011rfd1206atit3b diode2s4 4pinxstr
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IRF510
Abstract: irf540
Contextual Info: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5
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4-pin80irfd113irfd111irfd123+8irfd121irff113irff111irf513irf511irff123irf510irf540
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7optek a400 817sprague 513dsprague 926csprague 195prapa relay 12vdctriac tag 8948mascot 719
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1RFZ40
Abstract: MFE9200 1rfz44 1RFD123 irfz12 IRF145 irfu9220 irfu9222 IRFZ45 IRH450
Contextual Info: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Ciss Coss Crss ft & *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Id (A) m % Vd s (V) ínA) Vg s (V) 1R F Z 3 5 IR N
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ta-25irfz35o-220ab1rfz40+14irfz423to-220irl510o-220irl511mfe92001rfz441rfd123irfz12irf145irfu9220irfu9222irfz45irh450
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IRF540R
Abstract: IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R
Contextual Info: THOMSON/ DI STR IBUTOR SflE D • TDabflTB DODSTCH TT1 ■ TCSK Power MOSFETs Rugged-Series Power MOSFETs — N-Channel Package a if1 Maximum Ratings b v DSS V >d s (A) rDS(ON) OHMS E AS (mi) 60 0.80 1 1.1 1.3 3 3.50 4 5 6 7 7 8 8 12 14 24 27 33 40 0.80
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to-204t0-205t0-220to-247+14irfd113rirfd111rirfd123rirfd121rirff113rirff111rirf540rirfp140rthomson distributorirf513rirf633rthomson 58ethomson distributor 58e dirf511r
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