IRFD122 Search Results

Contextual Info: IRFD122 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)1.1# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.4# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ

IRF0123

Abstract: IRFD122 IRFD123
Contextual Info: [F FIELD EFFECT POWER TRANSISTOR ]CZ T h is series of N -C h a n n e i E n h a n ce m e n t-m o d e Pow er M O S F E T s utilizes G E 's advanced Power D M O S technology to achieve low on-reslstance with excellent device rugged­ ness and reliability. IRFD122.123

IRFD123

Abstract: IRF0123 100MS IRFD122 transistor 123 DL
Contextual Info: r a ? M ^ D lM ! S @ F IE F IRFD122.123 RELD EFFECT POWER TRANSISTOR 1.1 AMPERES 100,60 VOLTS RPS ON = 0-4 A This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

irfd121

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IR FD 120 IRFD121 IRFD122 IRFD123 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode S ilicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS{on = 0 3 0 H M 100 VOLTS

irfd123

Abstract: 2501a IRFD120R IRFD121R IRFD122R IRFD123R IRF012
Contextual Info: Rugged Pow er M O S F E T s_ File Number 2036 IRFD120R, IRFD121R, IRFD122R, IRFD123R Avalanche Energy Rated N-Channel Power MOSFETs 1.3A and 1.1A, 60V-100V ros on = 0.300 and 0.400 N -C H A N N E L E N H A N C E M E N T M O D E Features:

IRFD120

Abstract: IRFD121 IRFD122 IRFD123 irfd1201
Contextual Info: Standard Power MOSFETs - IRFD120, IRFD121, IRFD122, IRFD123 File Number 2315 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistore N -C H A N N EL E N H A N C EM EN T M O DE 1.1 A and 1.3 A, 60 V - 100 V rDsfoni= 0.3 O and 0.4 O

IRFD123

Abstract: IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334
Contextual Info: IRFD120, IRFD121, IRFD122, IRFD123 Semiconductor 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

1RFD123

Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*

mfe9200

Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
Contextual Info: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

IRFD110

Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
Contextual Info: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5

IRF8C30

Abstract: MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAF50 IRFAF52 IRFAG50 IRFBC32
Contextual Info: 257 - f M « tt fi ± £ Vd s or € t h fë Ta=25t3 Vg s * /CH Vd g (V) Id (V) (A) m m 1GSS Pt> V g s th) 1DSS (nA) (W) (MA) Vd s (V) (V) (V) '14 (Ta=25°C) Ciss Vd s = Vg s * /CH Vg s (V) ft Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ

MPF89

Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
Contextual Info: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max

IRF510

Abstract: irf540
Contextual Info: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5

IRFD121

Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
Contextual Info: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

IRF540R

Abstract: IRFP140R THOMSON DISTRIBUTOR IRF513R IRF633R THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF511R IRFD111R IRFD113R
Contextual Info: THOMSON/ DI STR IBUTOR SflE D • TDabflTB DODSTCH TT1 ■ TCSK Power MOSFETs Rugged-Series Power MOSFETs — N-Channel Package a if1 Maximum Ratings b v DSS V >d s (A) rDS(ON) OHMS E AS (mi) 60 0.80 1 1.1 1.3 3 3.50 4 5 6 7 7 8 8 12 14 24 27 33 40 0.80

1RFD123

Abstract: 1rfz42 MFE9200 IRF022 IRFZ30 D121 IRFD120 IRFD122 IRFD210 IRFD212
Contextual Info: - 276 - f m * M € tt € Vd s or + Vd g % V «e % £ té {Ta=25°C) Vg s Id (V) 1GSS Pd * /CH (A) V g s th) 1DSS CnA) m Vg s (V) ( M A) Vd s (V) fë £ (Ta=25'C) Id (oîi) Id (mA) Ciss Coss Crss (*typ) (*typ) (max) (pF) (max) (pF) (*typ) (max) (pF) ft

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

Contextual Info: • 43 05 57 1 0 0 5 4 0 ^ 5 SSI ■ HAS IRFD12 0 /1 2 1 /1 2 2 /1 2 3 IRFD120R/121R/122R/123R I HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4-PIN DIP TO P VIEW • 1.3A and 1.1 A, 80V - 100V • rDS(on) = 0-30n and 0.40ii