IRFD Search Results

Contextual Info: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFD9024

Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion

IRFD9120

Contextual Info: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration

IRFD 110

Abstract: IRFD 640
Contextual Info: Tem ic IRFDllO N-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Œ ) 100 0.60 4-P in D IP G Œ s tr Id (A) 1.0 U a <Jt Top View Ô s N -C hannel M O S F E T Absolute Maximum Ratings (T^ = 25°C Unless Otherwise Noted)

irfd9120

Abstract: IRFD9123 IRFD9123 Siliconix
Contextual Info: Tem ic IRFD9120/9123 Siliconix P-Channel Enhancement-Mode Transistors Product Summary P a rt N um ber V BR DSS (V) r DS(on) ( ß ) I d (A) IRFD9120 -100 0.60 - 1 .0 IRFD9123 -6 0 0.80 -0.8 S o 4-Pin DIP G 0 - 1|— HE • u Top View D D P-C hannel M O S F E T

part marking information vishay irfd110pbf

Abstract: IRFD120
Contextual Info: PD- 95927 IRFD110PbF • Lead-Free Document Number: 91127 10/27/04 www.vishay.com 1 IRFD110PbF Document Number: 91127 www.vishay.com 2 IRFD110PbF Document Number: 91127 www.vishay.com 3 IRFD110PbF Document Number: 91127 www.vishay.com 4 IRFD110PbF Document Number: 91127

IRFD9110

Abstract: IRFD9112
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | t3b7SSM OOflbti? 7 | IRFD9110 IRFD9112 FET DIP C A S E 370 01, ST YLE 1 M AXIM UM RATINGS Symbol Rating IRFD9112 IRFD9110 Unit Drain-Source Voltage Voss -1 0 0 Vdc Drain-Gate Voltage Rq s = 20 ^ Vd g r -1 0 0 Vdc 20 Vdc Gate-Source Voltage

part marking information vishay irfd110pbf

Contextual Info: PD- 95927 IRFD110PbF • Lead-Free Document Number: 91127 10/27/04 www.vishay.com 1 IRFD110PbF Document Number: 91127 www.vishay.com 2 IRFD110PbF Document Number: 91127 www.vishay.com 3 IRFD110PbF Document Number: 91127 www.vishay.com 4 IRFD110PbF Document Number: 91127

Contextual Info: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer

IRFD9210

Contextual Info: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion

IRFD310

Contextual Info: PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer

IRFD210

Abstract: TB334
Contextual Info: IRFD210 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Power MOSFET in a HEXDIP package

Abstract: TA17401 IRFD120 TB334
Contextual Info: IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • rDS ON = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFD320

Abstract: TA17404 TB334
Contextual Info: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFD210

Contextual Info: IRFD210 Data Sheet Title FD 0 bt 6A, 0V, 00 m, an- 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

Contextual Info: IRFD220 Data Sheet Title FD 0 bt 8A, 0V, 00 m, July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFD224

Contextual Info: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the

IRFD214

Abstract: n mosfet low vgs
Contextual Info: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT

s0918

Abstract: IRFD9220
Contextual Info: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel

IRFD220

Abstract: SiHFD220-E3 IRFD220PBF
Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

385H

Abstract: IRFD120 dual mosfet marking 506
Contextual Info: International S Rectifier PD-9.385H IRFD120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS on =

IRFD220

Abstract: Transistors c-3229 C 3229 IRFD221 D220 IRFD222 IRFD223
Contextual Info: - Standard Power MOSFETs File Number IRFD220, IRFD221, IRFD222, IRFD223 23117 Power MOS Field-Effect Transistors N -C H A N N EL ENHAN C EM EN T MODE

marking B33 diode

Abstract: MOSFET IRFd9120 IRFD9120
Contextual Info: IINR 4ÔSSMS2 OOlSObH b33 International i«R Rectifier PD-9.3311 IRFD9120 HEXFET Power M O S F E T bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature

IRFD110

Abstract: irfd113 328h IRFD11Q k 3525 MOSFET S402 FD113 fd110 IRFD110/111/112/113
Contextual Info: HE D | 4055452 QQOaBbfl S | Dgta Sheet N q p D.g 328H INTERNATIONAL R E C T IF IE R T-35-25 IN T E R N A T IO N A L R E C T IF IE R llO R l HEXFET TRANSISTORS IRFD11Q N-CHANNEL IRFD113 HEXDIP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE