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    SIHFD9024 Search Results

    SIHFD9024 Datasheets Context Search

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    IRFD9024

    Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    irfd9024sihfd90242002/95/ec2011/65/eu+112-mar-12 PDF

    Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    irfd9024sihfd90242002/95/ec11-mar-11 PDF

    irfd9024

    Abstract: SiHFD9024
    Contextual Info: SiHFD9024, IRFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    sihfd9024irfd902418-jul-08 PDF

    IRFD9024

    Abstract: SiHFD9024
    Contextual Info: SiHFD9024, IRFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    sihfd9024irfd902418-jul-08 PDF

    AN609

    Abstract: IRFD9024
    Contextual Info: IRFD9024_RC, SiHFD9024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    irfd9024sihfd9024an6090426m+48968m4501m6212m26-oct-10 PDF

    IRFD9024

    Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    irfd9024sihfd90242002/95/ec18-jul-08 PDF

    irfd9024

    Abstract: SiHFD9024
    Contextual Info: SiHFD9024, IRFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    sihfd9024irfd902412-mar-07 PDF

    IRFD9024

    Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    irfd9024sihfd90242002/95/ec11-mar-11 PDF

    Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    irfd9024sihfd90242002/95/ec2011/65/eu+112-mar-12 PDF

    Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    irfd9024sihfd90242002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original
    irfd9024sihfd90242002/95/ec18-jul-08 PDF