TA17401 Search Results

Power MOSFET in a HEXDIP package

Abstract: TA17401 IRFD120 TB334
Contextual Info: IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • rDS ON = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

BUZ72A

Abstract: TA17401 TB334
Contextual Info: BUZ72A Data Sheet December 2001 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

BU272A

Abstract: BUZ72A
Contextual Info: interrii BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET PART NUMBER BU272A PACKAGE TO-220AB BRAND BUZ72A NOTE: When ordering, use the entire part number. 2262.2 Features • 9A, 100 V This is an N-Channel enhancement mode silicon gate power

Contextual Info: IR FD 120 S e m iconductor Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature

irfd120

Contextual Info: IRFD120 Data Sheet Title FD 0 bt 3A, 0V, 00 m, an- 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

BUZ72A

Abstract: TA17401 TB334
Contextual Info: BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

Contextual Info: BUZ72A Semiconductor Data Sheet June 1999 9A, 100 V, 0.250 Ohm, N-Channel Power MOSFET File Number 2262.2 Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

IRFD120

Abstract: TA17401 TB334
Contextual Info: IRFD120 Data Sheet January 2002 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features • 1.3A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

IRFD123

Abstract: IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334
Contextual Info: IRFD120, IRFD121, IRFD122, IRFD123 Semiconductor 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

IRFD121

Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
Contextual Info: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

BUZ72A

Abstract: mosfet .5a 100v
Contextual Info: BUZ72A Data Sheet [ /Title BUZ7 2A /Subject (9A, 100V, 0.250 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features