IR101 Search Results

IR1011

Contextual Info: [IR1011] IR1011 赤外線センサ 特 長 旭化成赤外線センサ IR1011 は常温で動作することを特徴とした超小型、表面実装対応の量子 型赤外線センサです。自社のホール素子製造技術をベースにした InSb 薄膜からフォトダイオード

IR1011

Contextual Info: IR101１Evaluation Board Manual Features • The evaluation board for AsahiKasei’s infrared sensor IR1011 including Current-Voltage convertor and amplifier. • Field of view FOV limiter and optical filter (5um long-pass filter) are mounted to make easy to start to evaluate.

Contextual Info: IR101１評価基板取扱説明書 特 長 • 旭化成赤外線センサ IR1011 用の電流電圧変換型評価基板です。 • センサ上に視野制限体および光学フィルタ（５ m ロングパスフィルタ）を装着しています。

IR1011

Contextual Info: [IR1011] IR1011 Photovoltaic Infrared Sensor GENERAL DESCRIPTION IR1011 is the world smallest mid-infrared quantum photo diode, made of InSb. This surface mount type sensor can be operated at room temperature, and applicable to human body detection, non-contacting temperature measurement, and NDIR gas sensor.

IR10100

Abstract: NDIR CO sensor CO Gas sensor ndir MQ-2 gas sensor NDIR gas sensor human body temperature detection sensor Thermopile ndir NDIR sensor co2 microwave proximity sensor InSb spectral response
Contextual Info: — Mixed Signal & Sensor Solutions IR 10100 PRODUCT BRIEF InSb Mid-Infrared Sensor Description The IR10100 is the smallest photovoltaic midinfrared sensor, based on an evolutionary InSb p-i-n structure. It detects wavelength from 2 to 7|jm at room tem perature, suitable for human body

pic18f877

Abstract: PIC16F877 Data Logger ir113 hp ipaq power connector ircomm PIC18F8772 cd 4553 PIC18F1320 LCD MCP2140 MCP2140A
Contextual Info: MCP2140A IrDA Standard Protocol Stack Controller With Fixed 9600 Baud Communication Rate Features Package Types ® • • • • Low power, high-speed CMOS technology Low voltage operation Industrial temperature range Low power consumption: - < 407 µA maximum @ 2.0V, 3.6864 MHz

CV-4505

Abstract: tyco burndy burndy raychem JOINT procedure thermofit AD-1323 IR-1012 Raychem joint holding fixture
Contextual Info: SPECIFICATION CONTROL DRAWING MATERIALS 1. SOLDERSLEEVE: D-141-31. Quantity Per Assembly: 1000 2. CARRIER STRIP: Adhesive Coated High Temperature Tape APPLICATION 1. This assembly is designed for terminating 26 AWG to 22 AWG PVC wire to connectors having 0.64 0.025 diameter pins on 2.54 (0.100) center spacing.

world elctronic site

Abstract: 2.3 pitch 9 pin connector for laptop battery 052 marking code digital transistor ROHM 11.0592mhz crystal oscillator 2 pin crystal oscillator 11.0592 mhz agilent d041 agilent optical encoder IR112 irobex xtal 11.0592 2 pin
Contextual Info: M MCP2150 Infrared Communications Controller Supporting The IrDA Standard FEATURES PIN DIAGRAMS IrDA® • • • • • Low-power, high-speed CMOS technology Fully static design Low voltage operation Industrial temperature range Low power consumption

IC-3647

Abstract: B553 IC B553 PD750008CU-XXX
Contextual Info: DATA SH EET MOS INTEGRATED CIRCUIT ¿¿PD7 5 0 0 0 4 , 7 5 0 0 0 6 ,7 5 0 0 0 8 4 BIT SINGLE-CHIP MICROCOMPUTER The ¿¿PD750008 is one of the 75XL series 4-bit single-chip microcomputers, which provide data processing capability equal to that of an 8-bit microcomputer.

IRD060

Abstract: ir led rx IR131A IR110A jornada 720 d010a ir133 D010 MCP2140 jornada
Contextual Info: MCP2140 通信速率为固定 9600 波特率的 IrDA 标准协议栈控制器 封装类型 特性 • 实现了 IrDA® 标准，包括： - IrLAP - IrLMP - IAS - TinyTP - IrCOMM （9 线 “Cooked”服务级别） • 提供 IrDA 标准物理信令层支持，包括：

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

SN0423

Abstract: 4100 ir receiver AN243 HSDL-7000 MCP2120 MCP2122 MCP2140 MCP2150 MCP2155 TCM809
Contextual Info: MCP2122 Infrared Encoder/Decoder Features Package Types • Pinout compatible with HSDL-7000 • Compliant with IrDA Standard Physical Layer Specification version 1.3 • UART to IrDA Standard Encoder/Decoder - Interfaces with IrDA Standard Compliant Transceiver

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power

TRANSISTOR BC 384

Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required

Transistor 2sC1060

Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:

MJ11017 equivalent

Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types