GT8G101
Abstract: 072G
Contextual Info: SILICON N CH ANN EL M O S T Y P E GT8G101 Unit in ram ST R O B E FLASH A P P L IC A T IO N S • • • Enhancement-Mode Low Saturation Voltage : V cE sat = 8V (Max.) (@Ic = 130A) 4.3V Gate Drive Collector Gate |fJ 3.0 m. Emitter > 0.75 M A X I M U M R A T IN G S (Ta = 25°C)
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gt8g101100ns072g |
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-v400j101hmg75j1bs11mg25j1b511+16mg50j1bs11mg100j1bs11mg150j1bs11mg25q1bs11mg50q1bs11mg75q1bs11s5j53mig30j103h200j2s5j25mg7502ysmg150j1js50mig100q201hgt60m301mig30j103hbmp6753
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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bce0010ebce0010fgt30j124gt30f123+8gt45f122gt30g122gt40j323gt30g123gt30f122igbt gt30j124gt45f122 seriesgt45f123
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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bce0010fgt30f124gt30j124gt30f123+7gt30g124gt45f12245f122gt30f124 equivalent30g122gt30g122gt30f122
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Contextual Info: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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gt50j101gt50t101mosfet 500v 50agt60m102+6s5j53gt60j101gt15q101 equivalentgt60m101s5783f500v n-channel igbt to-3p
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2sa949u50vi2ac22292sa1145u50v2sc2705+162sc22302sa817a2sc1627a2sa18112sc47072sa96515j102transistor 2sc4288atransistor 2sa 2sb 2sc 2sddrive ic 2sc33462sa 102 transistortransistor 2sa 10150j30102sc5030t15j103driver ic 2sc3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2sa817a2sa9402sa9492sa965+162sa9662sa10122sa10132sa10202sa11452sa11602sc5200, 2sa1943, 2sc5198gti5q1012sc50392sc45322sd20882sc33032sc5200, 2sa19432sa18032sc4408gt10g102
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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e0010abce0010a3503c-0109s5j53+9s5783fgt30j322s5783electronic ih rice cookergt50j101mg30t1al1igbt induction cookermg60m1al1mosfet 500v 50a
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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GT8G101
Abstract: 2BLC 27F2C 2-21F2C GT60M302
Contextual Info: TOSHIBA GT60M302 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL M O S TYPE GT60M302 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm ¿0 .5 M A X. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode
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gt60m302gt8g1012blc27f2c+12-21f2c
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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gt10g101gt10j301gt10j311gt10q301+15gt10qgt15g101gt15j101gt15j102gt15j103gt15q101g50q2ys40mg8q6es42gt8q102mg300q1us41gt60m301mig50j904hmig30j103hmg25q6es50amg150q1js
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GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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bce0010ds-167bce0010egt45f122+9gt30g122gt30f122gt45f123gt45f122 seriesgt35j321gt45g122gt60n32345f122gt45f124
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10A600V
Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Contextual Info: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU
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hgip12nb0b3115j101ixgp10n60aixgh10n60a+15hgtp20n6qb3gt25jt01ixgh20n6qaixgh24n6qaixgh40n60aixgh50n610a600v1xgh20n60au1igbt cross referenceixsh20n60au120a600v12a600vct60am-205n60rufd5a1200v
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GT30F121
Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications
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bce0010agt30f121gt30g121gt30g131+7mg30t1al1gt30*122gt45f12mg60m1al1gt30fgt60m301gt60m101
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