GT15N101
Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15N101 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15.9 MAX 02 l2±O.2 . High Input Impedance . High Speed : tf=1 *O y s M a x , . Low Saturation Voltage : V c e (s a t ) ~ 5•0 V ( M a x .)
|
OCR Scan
|
gt15n101 |
PDF
|
GT15N101
Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR GT15N101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15,9 MAX Zi3.2±a2 . High Input Impedance . High Speed : tf=l.Oils Max. ) . Low Saturation Voltage ; VcE(sat)=5.0V(Max.)
|
OCR Scan
|
gt15n101 |
PDF
|
GT15N101
Contextual Info: TOSHIBA -CDISCRETE/OPTO> TO DE J T C H T S S D 90D 9097250 TOSHIBA <DISCRETE/OPTO T O S H IB A SEMICONDUCTOR D D l b n o 16190 T | ~ D*7^-33-/3 TOSHIBA INSULATED GATE EIPOLAK TRANSISTOR GT15N101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE H I G H POWER S W I T C H I N G APPLICATIONS.
|
OCR Scan
|
d-p-33-/3gt15n101-3gt15n101 |
PDF
|
GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
|
Original
|
bce0010ebce0010fgt30j124gt30f123+8gt45f122gt30g122gt40j323gt30g123gt30f122igbt gt30j124gt45f122 seriesgt45f123
|
PDF
|
STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
|
Original
|
2002-sepstr-g6551str-f6654g6551+7tda16822str-f6653strg6551igbt cross referenceka5m0565rtop224y equivalentbup 312
|
PDF
|
GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
|
Original
|
bce0010fgt30f124gt30j124gt30f123+7gt30g124gt45f12245f122gt30f124 equivalent30g122gt30g122gt30f122
|
PDF
|
GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Contextual Info: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
|
Original
|
gt50j101gt50t101mosfet 500v 50agt60m102+6s5j53gt60j101gt15q101 equivalentgt60m101s5783f500v n-channel igbt to-3p
|
PDF
|
s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
|
Original
|
e0010abce0010a3503c-0109s5j53+9s5783fgt30j322s5783electronic ih rice cookergt50j101mg30t1al1igbt induction cookermg60m1al1mosfet 500v 50a
|
PDF
|
TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
|
Original
|
050106daa1/sc-70ytf6122sk2381+15ytf8412sk2387ytf4422sk2149ytf613toshiba mg150n2ys40mg75n2ys40mg15n6es42mg150n2ys402sk150atoshiba s2530a2sk270amg8n6es42mg15g1al2mg75j2ys40
|
PDF
|
MG30H1BL1
Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX
|
OCR Scan
|
00-600v-1400vgt8n101gt8q101+16gt25h101pmg25h1bs1gt25ji01gt50g102mg50h1bs1gt50j101mg30h1bl1s3885mg100h2zs1mg100g2ys1mg100n2ys1mp6502mg150j2ys1mp6101mg25q6es1mg15j6es1
|
PDF
|
GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
|
Original
|
bce0010ds-167bce0010egt45f122+9gt30g122gt30f122gt45f123gt45f122 seriesgt35j321gt45g122gt60n32345f122gt45f124
|
PDF
|
mg75n2ys40
Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種
|
Original
|
02bz21s20921sz575902cz2+161s20942n305502cz51s2095a2n371302z24a1mmg75n2ys40mg15n6es422sk150a2sk270amg150n2ys40mg8n6es42mg15g1al2mg75j2ys40mg30g1bl2s2530a
|
PDF
|
MG100g2ys1
Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series
|
OCR Scan
|
eg50n2ys9g15n2ysimg25n2ys1mg50n2ys1+16g35q2ysimg25q2ys1mg50q2ys1mg25s2ys1g25n1js1g50n1js1mg100g2ys1mg25q6es1mg100j2ys1ytf830gt25q103gt15h101toshiba mg50n2ys9mg200j2ys1mg75n2ys1mg75j2ys1
|
PDF
|
mg75n2ys40
Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
|
Original
|
050106daa1ytf8422sk2387ytf441+152sk2149ytf6132sk2381ytf843ytf442mg75n2ys402n3055 toshibamg150n2ys40tlr103toshiba 2n3055mg15n6es422sk150atoshiba mg150n2ys402sk270as2530a
|
PDF
|
|
|
GT15N101
Abstract: VQE 12 V16S GT15N101-3
Contextual Info: TOSHIBA { D ISC RE TE /O PT O} 9097250 TOSHIBA TO SH IBA “t d de DISCRETE/OPTO SEMICONDUCTOR J tottssd 90D DDihna 16190 t |" D -p -3 3 -/3 TOSHIBA INSULATED GATE EIPOLAK TRANSISTOR G T 15N 10 1 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.
|
OCR Scan
|
d-p-33-/3gt15n101-3gt15n101vqe 12+1v16s
|
PDF
|
Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
|
Original
|
rd91ebq2n4401d1n3940q2n2907a+7d1n1190q2sc1815q2n3055q2n1132d1n750d02cz10d1n751
|
PDF
|
GT30J124
Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。
|
Original
|
bcj0010gbcj0010fgt30j124gt45f122+8gt30f123gt30f124gt30f122igbt gt30f124gt30g122gt30g124gt45g122gt30f125
|
PDF
|
